Rectifiers - Single
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CategorySemiconductors / Diodes & Rectifiers / Rectifiers - Single
Records 34,936
Page 154/1165
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | Diode Type | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
ON Semiconductor |
DIODE SCHOTTKY 60V 3A DPAK |
24,930 |
|
SWITCHMODE™ | Schottky | 60V | 3A | 600mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 60V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | -65°C ~ 175°C |
|
|
|
STMicroelectronics |
AUTOMOTIVE GRADE 60V LOWVF POWER |
108,666 |
|
Automotive, AEC-Q101, ECOPACK®2 | Schottky | 60V | 5A | - | Fast Recovery =< 500ns, > 200mA (Io) | - | 470µA @ 60V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 1KV 1.25A SOD57 |
208,632 |
|
- | Avalanche | 1000V | 1.25A | 1.5V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 5µA @ 1000V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 1KV 1.4A SOD57 |
232,596 |
|
- | Avalanche | 1000V | 1.4A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 5µA @ 1000V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.8KV 500MA DO204 |
109,230 |
|
SUPERECTIFIER® | Standard | 1800V | 500mA | 1.8V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 5µA @ 1800V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 2KV 500MA DO204 |
58,020 |
|
SUPERECTIFIER® | Standard | 2000V | 500mA | 1.8V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 5µA @ 2000V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURPOSE 600V SLIMDPAK |
34,266 |
|
eSMP® | Standard | 600V | 6A | 3.1V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 18ns | 5µA @ 600V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | SlimDPAK | -55°C ~ 175°C |
|
|
|
Diodes Incorporated |
DIODE SCHOTTKY 120V 8A POWERDI 5 |
36,546 |
|
- | Schottky | 120V | 8A | 840mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 300µA @ 120V | - | Surface Mount | PowerDI™ 5 | PowerDI™ 5 | - |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 1.5A DO214AA |
20,694 |
|
Automotive, AEC-Q101 | Standard | 400V | 1.5A | 1.3V @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 400V | 20pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 2KV 500MA DO204AL |
28,236 |
|
Automotive, AEC-Q101, Superectifier® | Standard | 2000V | 500mA | 1.8V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 5µA @ 2000V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
|
|
|
Taiwan Semiconductor Corporation |
5A, 50V, TRENCH SCHOTTKY RECTIFI |
52,224 |
|
Automotive, AEC-Q101 | Schottky | 60V | 5A | 560mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 300µA @ 60V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 3A 100V DO-214AB |
20,502 |
|
- | Schottky | 100V | 3A | 850mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 100V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
|
|
ON Semiconductor |
DIODE GEN PURP 200V 3A DPAK |
20,154 |
|
- | Standard | 200V | 3A | 950mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 200V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 1.6KV 2A SOD57 |
207,840 |
|
- | Avalanche | 1600V | 2A | 1.6V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 2µA @ 1400V | - | Through Hole | SOD-57, Axial | SOD-57 | 140°C (Max) |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 165V 2A SOD57 |
204,828 |
|
- | Avalanche | 165V | 2A | 1.07V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 165V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 165V 2A SOD57 |
184,728 |
|
- | Avalanche | 165V | 2A | 1.07V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 165V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
|
|
|
Nexperia |
DIODE SCHOTTKY 100V 6A CFP15 |
43,404 |
|
Automotive, AEC-Q101 | Schottky | 100V | 6A | 840mV @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 8ns | 450nA @ 100V | 200pF @ 1V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | CFP15 | 175°C (Max) |
|
|
|
Diodes Incorporated |
DIODE SCHOTTKY 30V 1A 2CSP |
276,024 |
|
- | Schottky | 30V | 1A | 400mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 30V | 150pF @ 5V, 1MHz | Surface Mount | 2-SMD, No Lead | X2-WLB2010-2 | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 200V 1.5A DO220 |
27,126 |
|
eSMP® | Avalanche | 200V | 1.5A (DC) | 1.15V @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | 1.5µs | 5µA @ 200V | 10.4pF @ 4V, 1MHz | Surface Mount | DO-220AA | DO-220AA (SMP) | -55°C ~ 175°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 3A DO214AB |
32,862 |
|
- | Standard | 400V | 3A | 1.3V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 400V | 30pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
|
|
Nexperia |
DIODE SCHOTTKY 30V 5A CFP15 |
15,210 |
|
Automotive, AEC-Q101 | Schottky | 30V | 5A | 550mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 16ns | 150µA @ 30V | 495pF @ 1V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | CFP15 | 175°C (Max) |
|
|
|
Nexperia |
DIODE SCHOTTKY 40V 5A CFP15 |
13,350 |
|
Automotive, AEC-Q101 | Schottky | 40V | 5A | 520mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 13ns | 120µA @ 40V | 395pF @ 1V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | CFP15 | 175°C (Max) |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVAL 1A 1000V SOD-57 |
221,292 |
|
- | Avalanche | 1000V | 1A | 1.7V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 1000V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 3A DO201AD |
32,988 |
|
- | Standard | 400V | 3A | 1V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 400V | 45pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 45V 3A DO221AC |
51,558 |
|
TMBS® | Schottky | 45V | 3A (DC) | 540mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 450µA @ 45V | 425pF @ 4V, 1MHz | Surface Mount | DO-221AC, SMA Flat Leads | DO-221AC (SlimSMA) | -40°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 40V 4A DO214AA |
29,070 |
|
Automotive, AEC-Q101 | Schottky | 40V | 4A | 500mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 40V | 235pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
|
|
|
Diodes Incorporated |
DIODE SBR 40V 3A POWERDI123 |
42,984 |
|
Automotive, AEC-Q101, SBR® | Super Barrier | 40V | 3A | 500mV @ 3A | Standard Recovery >500ns, > 200mA (Io) | - | 400µA @ 40V | - | Surface Mount | POWERDI®123 | PowerDI™ 123 | -65°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 8A 60V SMPC |
28,878 |
|
Automotive, AEC-Q101, eSMP®, TMBS® | Schottky | 60V | 8A | 640mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 600µA @ 60V | 1150pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -40°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 5A TO277A |
15,072 |
|
Automotive, AEC-Q101, eSMP® | Schottky | 100V | 5A | 880mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 15µA @ 100V | 130pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.3KV 1A DO214BA |
13,554 |
|
SUPERECTIFIER® | Standard | 1300V | 1A | 3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 1300V | - | Surface Mount | DO-214BA | DO-214BA (GF1) | -55°C ~ 150°C |