Rectifiers - Single
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CategorySemiconductors / Diodes & Rectifiers / Rectifiers - Single
Records 34,936
Page 1117/1165
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | Diode Type | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 2A DO204AC |
2,592 |
|
Automotive, AEC-Q101 | Standard | 200V | 2A | 950mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 5µA @ 200V | 35pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 5A DO201AD |
3,490 |
|
- | Standard | 200V | 5A | 1.05V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 10µA @ 200V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 175°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 5A DO201AD |
3,870 |
|
Automotive, AEC-Q101 | Standard | 200V | 5A | 1.05V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 10µA @ 200V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 175°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 5A DO201AD |
6,048 |
|
- | Standard | 400V | 5A | 1.55V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 10µA @ 400V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 175°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 5A DO201AD |
5,328 |
|
Automotive, AEC-Q101 | Standard | 400V | 5A | 1.55V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 10µA @ 400V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 175°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 5A DO201AD |
3,204 |
|
- | Standard | 600V | 5A | 2.1V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 30µA @ 600V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 5A DO201AD |
5,382 |
|
Automotive, AEC-Q101 | Standard | 600V | 5A | 2.1V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 30µA @ 600V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 45V 50A ARS |
2,988 |
|
- | Standard | 45V | 50A | 550mV @ 50A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 500µA @ 45V | 2700pF @ 4V, 1MHz | Surface Mount | ARS | ARS | -55°C ~ 175°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 45V 50A ARS |
7,488 |
|
Automotive, AEC-Q101 | Standard | 45V | 50A | 550mV @ 50A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 500µA @ 45V | 2700pF @ 4V, 1MHz | Surface Mount | ARS | ARS | -55°C ~ 175°C |
|
|
|
Central Semiconductor Corp |
DIODE SCHOTTKY 1.2KV 5A DPAK |
6,768 |
|
- | Silicon Carbide Schottky | 1200V | 5A | 1.7V @ 5A | No Recovery Time > 500mA (Io) | 0ns | 190µA @ 1200V | 240pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | -55°C ~ 175°C |
|
|
|
Central Semiconductor Corp |
DIODE SCHOTTKY 1.2KV 10A DPAK |
6,228 |
|
- | Silicon Carbide Schottky | 1200V | 10A | 1.7V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 250µA @ 1200V | 500pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | -55°C ~ 175°C |
|
|
|
WeEn Semiconductors |
DIODE GEN PURP 600V 30A TO220AC |
7,992 |
|
- | Standard | 600V | 30A | 1.8V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 600V | - | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
|
|
|
WeEn Semiconductors |
DIODE GEN PURP 600V 60A TO247-2 |
7,974 |
|
- | Standard | 600V | 60A | 2.6V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 600V | - | Through Hole | TO-247-2 | TO-247-2 | 175°C (Max) |
|
|
|
WeEn Semiconductors |
DIODE GEN PURP 600V 75A TO247-2 |
2,466 |
|
- | Standard | 600V | 75A | 2.75V @ 75A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 600V | - | Through Hole | TO-247-2 | TO-247-2 | 175°C (Max) |
|
|
|
WeEn Semiconductors |
DIODE GEN PURP 1.2KV 16A TO247-2 |
3,582 |
|
- | Standard | 1200V | 16A | 2.7V @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | 105ns | 100µA @ 1200V | - | Through Hole | TO-247-2 | TO-247-2 | 175°C (Max) |
|
|
|
WeEn Semiconductors |
DIODE GEN PURP 800V 8A TO220F |
7,668 |
|
- | Standard | 800V | 8A | 1.7V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 55ns | 10µA @ 800V | - | Through Hole | TO-220-2 Full Pack | TO-220F | 175°C (Max) |
|
|
|
WeEn Semiconductors |
DIODE GEN PURP 600V 15A TO220F |
3,582 |
|
- | Standard | 600V | 15A | 1.38V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 10µA @ 600V | - | Through Hole | TO-220-2 Full Pack | TO-220F | 175°C (Max) |
|
|
|
WeEn Semiconductors |
DIODE GEN PURP 600V 10A DPAK |
2,916 |
|
- | Standard | 600V | 10A | 2V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 600V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 175°C (Max) |
|
|
|
WeEn Semiconductors |
DIODE GEN PURP TO220F |
3,222 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
WeEn Semiconductors |
DIODE GEN PURP 600V 60A TO247-2 |
3,240 |
|
- | Standard | 600V | 60A | 2V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 55ns | 10µA @ 600V | - | Through Hole | TO-247-2 | TO-247-2 | 175°C (Max) |
|
|
|
Semtech |
DIODE GEN PURP 3KV 600MA AXIAL |
2,178 |
|
- | Standard | 3000V | 600mA | 5V @ 250mA | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 1µA @ 3000V | 8pF @ 5V, 1MHz | Through Hole | Axial | Axial | -65°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 4.5KV 200A |
5,130 |
|
- | Standard | 4500V | 200A | - | Standard Recovery >500ns, > 200mA (Io) | - | 30mA @ 4500V | - | Stud Mount | DO-205AA, DO-8, Stud | - | -40°C ~ 160°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 4.5KV 200A |
5,616 |
|
- | Standard | 4500V | 200A | - | Standard Recovery >500ns, > 200mA (Io) | - | 30mA @ 4500V | - | Stud Mount | DO-205AA, DO-8, Stud | - | -40°C ~ 160°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 200V 8320A |
4,878 |
|
- | Standard | 200V | 8320A | 795mV @ 4000A | Standard Recovery >500ns, > 200mA (Io) | - | 100mA @ 200V | - | Chassis Mount | DO-200AD | - | -25°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 2.8KV 850A |
7,362 |
|
- | Standard | 2800V | 850A | 1.28V @ 850A | Standard Recovery >500ns, > 200mA (Io) | - | 50mA @ 2800V | - | Chassis Mount | DO-200AB, B-PUK | - | -40°C ~ 160°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 3KV 850A |
7,308 |
|
- | Standard | 3000V | 850A | 1.28V @ 850A | Standard Recovery >500ns, > 200mA (Io) | - | 50mA @ 3000V | - | Chassis Mount | DO-200AB, B-PUK | - | -40°C ~ 160°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 3.4KV 850A |
8,568 |
|
- | Standard | 3400V | 850A | 1.28V @ 850A | Standard Recovery >500ns, > 200mA (Io) | - | 50mA @ 3400V | - | Chassis Mount | DO-200AB, B-PUK | - | -40°C ~ 160°C |
|
|
|
Infineon Technologies |
DIODE RECTFIER FAST 4100V 160A |
8,262 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
DIODE RECTFIER FAST 4100V 160A |
2,466 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.6KV 450A |
4,356 |
|
- | Standard | 1600V | 450A | - | Standard Recovery >500ns, > 200mA (Io) | - | 40mA @ 1600V | - | Stud Mount | DO-205AA, DO-8, Stud | - | -40°C ~ 180°C |