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Rectifiers - Single

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CategorySemiconductors / Diodes & Rectifiers / Rectifiers - Single
Records 34,936
Page 1087/1165
Image
Part Number
Manufacturer
Description
In Stock
Quantity
Series
Diode Type
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
SR802HA0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 20V 8A DO201AD
7,668
Automotive, AEC-Q101
Schottky
20V
8A
550mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 20V
-
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 125°C
SR803 A0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 8A DO201AD
8,586
-
Schottky
30V
8A
550mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 30V
-
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 125°C
SR803HA0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 8A DO201AD
7,272
Automotive, AEC-Q101
Schottky
30V
8A
550mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 30V
-
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 125°C
SR805HA0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 50V 8A DO201AD
8,154
Automotive, AEC-Q101
Schottky
50V
8A
700mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 50V
-
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SR806HA0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 60V 8A DO201AD
4,464
Automotive, AEC-Q101
Schottky
60V
8A
700mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 60V
-
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SR809 A0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 90V 8A DO201AD
4,392
-
Schottky
90V
8A
920mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 90V
-
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SR809HA0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 90V 8A DO201AD
8,892
Automotive, AEC-Q101
Schottky
90V
8A
920mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 90V
-
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SR815HA0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 150V 8A DO201AD
6,516
Automotive, AEC-Q101
Schottky
150V
8A
1.02V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 150V
-
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SRT110HA0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 100V 1A TS-1
4,356
Automotive, AEC-Q101
Schottky
100V
1A
800mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 100V
-
Through Hole
T-18, Axial
TS-1
-55°C ~ 150°C
SRT115HA0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 150V 1A TS-1
4,824
Automotive, AEC-Q101
Schottky
150V
1A
900mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 150V
-
Through Hole
T-18, Axial
TS-1
-55°C ~ 150°C
SRT14HA0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 40V 1A TS-1
6,354
Automotive, AEC-Q101
Schottky
40V
1A
550mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 40V
-
Through Hole
T-18, Axial
TS-1
-55°C ~ 125°C
SRT16HA0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 60V 1A TS-1
4,068
Automotive, AEC-Q101
Schottky
60V
1A
700mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 60V
-
Through Hole
T-18, Axial
TS-1
-55°C ~ 150°C
SRT19 A0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 90V 1A TS-1
2,430
-
Schottky
90V
1A
800mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 90V
-
Through Hole
T-18, Axial
TS-1
-55°C ~ 150°C
SRT19HA0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 90V 1A TS-1
6,732
Automotive, AEC-Q101
Schottky
90V
1A
800mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 90V
-
Through Hole
T-18, Axial
TS-1
-55°C ~ 150°C
UG06A A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 600MA TS-1
5,256
-
Standard
50V
600mA
950mV @ 600mA
Fast Recovery =< 500ns, > 200mA (Io)
15ns
5µA @ 50V
9pF @ 4V, 1MHz
Through Hole
T-18, Axial
TS-1
-55°C ~ 150°C
UG06AHA0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 600MA TS-1
3,600
Automotive, AEC-Q101
Standard
50V
600mA
950mV @ 600mA
Fast Recovery =< 500ns, > 200mA (Io)
15ns
5µA @ 50V
9pF @ 4V, 1MHz
Through Hole
T-18, Axial
TS-1
-55°C ~ 150°C
UG06B A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 600MA TS-1
3,582
-
Standard
100V
600mA
950mV @ 600mA
Fast Recovery =< 500ns, > 200mA (Io)
15ns
5µA @ 100V
9pF @ 4V, 1MHz
Through Hole
T-18, Axial
TS-1
-55°C ~ 150°C
UG06BHA0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 600MA TS-1
5,742
Automotive, AEC-Q101
Standard
100V
600mA
950mV @ 600mA
Fast Recovery =< 500ns, > 200mA (Io)
15ns
5µA @ 100V
9pF @ 4V, 1MHz
Through Hole
T-18, Axial
TS-1
-55°C ~ 150°C
UG06D A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 600MA TS-1
3,510
-
Standard
200V
600mA
950mV @ 600mA
Fast Recovery =< 500ns, > 200mA (Io)
15ns
5µA @ 200V
9pF @ 4V, 1MHz
Through Hole
T-18, Axial
TS-1
-55°C ~ 150°C
UG06DHA0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 600MA TS-1
2,718
Automotive, AEC-Q101
Standard
200V
600mA
950mV @ 600mA
Fast Recovery =< 500ns, > 200mA (Io)
15ns
5µA @ 200V
9pF @ 4V, 1MHz
Through Hole
T-18, Axial
TS-1
-55°C ~ 150°C
UG2DHA0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 2A DO204AC
3,400
Automotive, AEC-Q101
Standard
200V
2A
950mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
5µA @ 200V
35pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
UG54G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 5A DO201AD
7,938
-
Standard
200V
5A
1.05V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
20ns
10µA @ 200V
-
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 175°C
UG54GHA0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 5A DO201AD
7,092
Automotive, AEC-Q101
Standard
200V
5A
1.05V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
20ns
10µA @ 200V
-
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 175°C
UG56G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 5A DO201AD
3,582
-
Standard
400V
5A
1.55V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
20ns
10µA @ 400V
-
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 175°C
UG56GHA0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 5A DO201AD
7,380
Automotive, AEC-Q101
Standard
400V
5A
1.55V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
20ns
10µA @ 400V
-
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 175°C
UG58GHA0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 5A DO201AD
2,808
Automotive, AEC-Q101
Standard
600V
5A
2.1V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
20ns
30µA @ 600V
-
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
GPA801 C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 8A TO220AC
7,578
-
Standard
50V
8A
1.1V @ 8A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 50V
50pF @ 4V, 1MHz
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
GPA801HC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 8A TO220AC
4,086
Automotive, AEC-Q101
Standard
50V
8A
1.1V @ 8A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 50V
50pF @ 4V, 1MHz
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
GPA802 C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 8A TO220AC
2,898
-
Standard
100V
8A
1.1V @ 8A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 100V
50pF @ 4V, 1MHz
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
GPA802HC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 8A TO220AC
5,256
Automotive, AEC-Q101
Standard
100V
8A
1.1V @ 8A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 100V
50pF @ 4V, 1MHz
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C