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Rectifiers - Single

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CategorySemiconductors / Diodes & Rectifiers / Rectifiers - Single
Records 34,936
Page 1055/1165
Image
Part Number
Manufacturer
Description
In Stock
Quantity
Series
Diode Type
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
ES3J M6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 3A DO214AB
3,436
-
Standard
600V
3A
1.7V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 600V
30pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
ES3JHM6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 3A DO214AB
6,984
Automotive, AEC-Q101
Standard
600V
3A
1.7V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 600V
30pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
ESH3B M6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 3A DO214AB
5,832
-
Standard
100V
3A
900mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
20ns
5µA @ 100V
45pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 175°C
ESH3C M6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 3A DO214AB
6,966
-
Standard
150V
3A
900mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
20ns
5µA @ 150V
45pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 175°C
ESH3D M6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 3A DO214AB
7,596
-
Standard
200V
3A
900mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
20ns
5µA @ 200V
45pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 175°C
HS3A M6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 3A DO214AB
7,452
-
Standard
50V
3A
1V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 50V
80pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
HS3B M6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 3A DO214AB
8,838
-
Standard
100V
3A
1V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 100V
80pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
HS3D M6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 3A DO214AB
5,454
-
Standard
200V
3A
1V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 200V
80pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
HS3F M6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 3A DO214AB
5,436
-
Standard
300V
3A
1V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 300V
80pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
HS3G M6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 3A DO214AB
7,272
-
Standard
400V
3A
1.3V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 400V
80pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
HS3J M6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 3A DO214AB
4,500
-
Standard
600V
3A
1.7V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
10µA @ 600V
50pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
HS3K M6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 3A DO214AB
5,742
-
Standard
800V
3A
1.7V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
10µA @ 800V
50pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
HS3M M6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 3A DO214AB
4,356
-
Standard
-
3A
1.7V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
10µA @ 1000V
50pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
HS5A M6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 5A DO214AB
5,436
-
Standard
50V
5A
1V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 50V
80pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
HS5B M6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 5A DO214AB
4,572
-
Standard
100V
5A
1V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 100V
80pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
HS5D M6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 5A DO214AB
7,866
-
Standard
200V
5A
1V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 200V
80pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
HS5F M6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 5A DO214AB
5,112
-
Standard
300V
5A
1.7V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 300V
80pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
HS5G M6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 5A DO214AB
3,508
-
Standard
400V
5A
1.3V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 400V
80pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
HS5J M6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 5A DO214AB
4,230
-
Standard
600V
5A
1.7V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
10µA @ 600V
50pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
HS5K M6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 5A DO214AB
3,402
-
Standard
800V
5A
1.7V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
10µA @ 800V
50pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
HS5M M6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 5A DO214AB
3,978
-
Standard
-
5A
1.7V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
10µA @ 1000V
50pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
MUR305S M6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 3A DO214AB
4,374
-
Standard
50V
3A
875mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
5µA @ 50V
-
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 175°C
MUR305SHM6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 3A DO214AB
7,452
Automotive, AEC-Q101
Standard
50V
3A
875mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
5µA @ 50V
-
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 175°C
MUR310S M6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 3A DO214AB
8,244
-
Standard
100V
3A
875mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
5µA @ 100V
-
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 175°C
MUR310SHM6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 3A DO214AB
2,934
Automotive, AEC-Q101
Standard
100V
3A
875mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
5µA @ 100V
-
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 175°C
MUR315S M6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 3A DO214AB
7,668
-
Standard
150V
3A
875mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
5µA @ 150V
-
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 175°C
MUR315SHM6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 3A DO214AB
8,352
Automotive, AEC-Q101
Standard
150V
3A
875mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
5µA @ 150V
-
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 175°C
MUR320S M6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 3A DO214AB
3,060
-
Standard
200V
3A
875mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
5µA @ 200V
-
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 175°C
MUR320SHM6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 3A DO214AB
4,698
Automotive, AEC-Q101
Standard
200V
3A
875mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
5µA @ 200V
-
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 175°C
MUR340SHM6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 3A DO214AB
7,272
Automotive, AEC-Q101
Standard
400V
3A
1.25V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 400V
-
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 175°C