Rectifiers - Single
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CategorySemiconductors / Diodes & Rectifiers / Rectifiers - Single
Records 34,936
Page 1040/1165
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | Diode Type | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Diodes Incorporated |
DIODE |
2,538 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Diodes Incorporated |
DIODE |
4,536 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Diodes Incorporated |
DIODE |
5,220 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Diodes Incorporated |
DIODE |
8,406 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Diodes Incorporated |
DIODE |
3,418 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Diodes Incorporated |
DIODE |
4,284 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Diodes Incorporated |
DIODE |
7,488 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Global Power Technologies Group |
DIODE SCHOTTKY 650V 30A TO220-2 |
1,559 |
|
Amp+™ | Silicon Carbide Schottky | 650V | 30A (DC) | 1.65V @ 10A | No Recovery Time > 500mA (Io) | - | 100µA @ 650V | 527pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
|
|
|
Global Power Technologies Group |
DIODE SCHOTTKY 650V 30A TO252 |
3,726 |
|
Amp+™ | Silicon Carbide Schottky | 650V | 30A (DC) | 1.65V @ 10A | No Recovery Time > 500mA (Io) | - | 100µA @ 650V | 527pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | -55°C ~ 175°C |
|
|
|
Global Power Technologies Group |
DIODE SCHOTTKY 650V 58A TO247-2 |
5,605 |
|
Amp+™ | Silicon Carbide Schottky | 650V | 58A (DC) | 1.65V @ 20A | No Recovery Time > 500mA (Io) | - | 200µA @ 650V | 1054pF @ 1V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
|
|
|
Global Power Technologies Group |
DIODE SCHOTKY 1.2KV 182A TO247-2 |
8,406 |
|
Amp+™ | Silicon Carbide Schottky | 1200V | 182A (DC) | 1.8V @ 60A | No Recovery Time > 500mA (Io) | - | 500µA @ 1200V | 3809pF @ 1V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
|
|
|
Central Semiconductor Corp |
DIODE GEN PURP 125V 200MA DO35 |
4,644 |
|
- | Standard | 125V | 200mA | 1.15V @ 300mA | Small Signal =< 200mA (Io), Any Speed | 3µs | 3nA @ 125V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 200°C |
|
|
|
Diodes Incorporated |
DIODE SCHOTTKY 60V 2A SOD123F |
2,556 |
|
- | Schottky | 60V | 2A | 760mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150µA @ 60V | 8pF @ 4V, 1MHz | Surface Mount | SOD-123F | SOD-123F | -65°C ~ 175°C |
|
|
|
Diodes Incorporated |
SCHOTTKY RECTIFIER PDI5 |
8,568 |
|
Automotive, AEC-Q101 | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Diodes Incorporated |
SCHOTTKY RECTIFIER PDI5 |
7,452 |
|
Automotive, AEC-Q101 | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Diodes Incorporated |
SCHOTTKY RECTIFIER PDI5 |
3,708 |
|
Automotive, AEC-Q101 | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Diodes Incorporated |
SCHOTTKY RECTIFIER PDI5 |
4,248 |
|
Automotive, AEC-Q101 | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHTKY 30V 200MA MINI MELF |
2,682 |
|
- | Schottky | 30V | 200mA | 800mV @ 100mA | Small Signal =< 200mA (Io), Any Speed | 5ns | 2µA @ 30V | 10pF @ 1V, 1MHz | Surface Mount | DO-213AC, MINI-MELF, SOD-80 | Mini MELF | 125°C (Max) |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 1A SMA-FL |
4,086 |
|
- | Standard | 600V | 1A | 1.7V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 600V | 9pF @ 4V, 1MHz | Surface Mount | DO-221AC, SMA Flat Leads | SMA-FL | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 1KV 1A SOD123FL |
6,786 |
|
- | Standard | 1000V | 1A | 1.1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1µA @ 1000V | 7pF @ 4V, 1MHz | Surface Mount | SOD-123F | SOD-123FL | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 50V 1A MELF |
4,212 |
|
- | Standard | 50V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 50V | 15pF @ 4V, 1MHz | Surface Mount | DO-213AB, MELF | MELF | -65°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 1A MELF |
5,490 |
|
- | Standard | 100V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 100V | 15pF @ 4V, 1MHz | Surface Mount | DO-213AB, MELF | MELF | -65°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 1A MELF |
4,014 |
|
- | Standard | 200V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 200V | 15pF @ 4V, 1MHz | Surface Mount | DO-213AB, MELF | MELF | -65°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 1A MELF |
6,606 |
|
- | Standard | 600V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 600V | 15pF @ 4V, 1MHz | Surface Mount | DO-213AB, MELF | MELF | -65°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 800V 1A MELF |
4,500 |
|
- | Standard | 800V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 800V | 15pF @ 4V, 1MHz | Surface Mount | DO-213AB, MELF | MELF | -65°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 1000V 1A MELF |
3,996 |
|
- | Standard | - | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 1000V | 15pF @ 4V, 1MHz | Surface Mount | DO-213AB, MELF | MELF | -65°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 50V 1A DO204AL |
4,032 |
|
- | Standard | 50V | 1A | 1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 50V | 10pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 50V 1A DO204AL |
2,556 |
|
Automotive, AEC-Q101 | Standard | 50V | 1A | 1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 50V | 10pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 1A DO204AL |
3,510 |
|
- | Standard | 100V | 1A | 1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 100V | 10pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 1A DO204AL |
3,436 |
|
Automotive, AEC-Q101 | Standard | 100V | 1A | 1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 100V | 10pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -55°C ~ 150°C |