Rectifiers - Single
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CategorySemiconductors / Diodes & Rectifiers / Rectifiers - Single
Records 34,936
Page 1003/1165
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | Diode Type | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Microsemi |
DIODE GEN PURP 900V 1.4A E-MELF |
5,040 |
|
Military, MIL-PRF-19500/590 | Standard | 900V | 1.4A | 1.4V @ 1.4A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 2µA @ 900V | - | Surface Mount | SQ-MELF, E | D-5B | -65°C ~ 150°C |
|
|
Microsemi |
DIODE GEN PURP 900V 1.4A E-MELF |
282 |
|
Military, MIL-PRF-19500/590 | Standard | 900V | 1.4A | 1.4V @ 1.4A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 2µA @ 900V | - | Surface Mount | SQ-MELF, E | D-5B | -65°C ~ 150°C |
|
|
Microsemi |
DIODE GEN PURP 1.1KV 1.4A D5B |
4,104 |
|
Military, MIL-PRF-19500/590 | Standard | 1100V | 1.4A | 1.6V @ 1.4A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 4µA @ 1100V | 40pF @ 10V, 1MHz | Through Hole | E, Axial | E-PAK | -65°C ~ 150°C |
|
|
Microsemi |
DIODE GEN PURP 1KV 1.4A E-MELF |
2,844 |
|
Military, MIL-PRF-19500/590 | Standard | 1000V | 1.4A | 1.6V @ 1.4A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 4µA @ 1000V | - | Surface Mount | SQ-MELF, E | D-5B | -65°C ~ 150°C |
|
|
Microsemi |
DIODE GEN PURP 50V 300MA B-MELF |
3,436 |
|
Military, MIL-PRF-19500/609 | Standard | 50V | 300mA | 1V @ 300mA | Fast Recovery =< 500ns, > 200mA (Io) | 4ns | 100nA @ 50V | - | Surface Mount | SQ-MELF, B | D-5B | -65°C ~ 175°C |
|
|
Microsemi |
DIODE GEN PURP 75V 300MA UB |
8,208 |
|
Military, MIL-PRF-19500/578 | Standard | 75V | 300mA (DC) | 1.2V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 500nA @ 75V | - | Surface Mount | 3-SMD, No Lead | 3-UB (3.09x2.45) | -65°C ~ 175°C |
|
|
Microsemi |
DIODE GEN PURP 75V 300MA UB |
7,668 |
|
Military, MIL-PRF-19500/578 | Standard | 75V | 300mA | 1.2V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 500nA @ 75V | - | Surface Mount | 3-SMD, No Lead | 3-UB (3.09x2.45) | -65°C ~ 175°C |
|
|
Microsemi |
DIODE GEN PURP 75V 300MA UB |
3,672 |
|
Military, MIL-PRF-19500/578 | Standard | 75V | 300mA | 1.2V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 5ns | 500nA @ 75V | 5pF @ 0V, 1MHz | Surface Mount | 3-SMD, No Lead | 3-UB (3.09x2.45) | -65°C ~ 175°C |
|
|
Microsemi |
DIODE GEN PURP 75V 300MA UB |
4,302 |
|
Military, MIL-PRF-19500/578 | Standard | 75V | 300mA (DC) | 1.2V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 500nA @ 75V | - | Surface Mount | 3-SMD, No Lead | 3-UB (3.09x2.45) | -65°C ~ 175°C |
|
|
Microsemi |
DIODE GEN PURP 50V 300MA D-MELF |
7,776 |
|
Military, MIL-PRF-19500/578 | Standard | 50V | 300mA | 1.2V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 6ns | 500nA @ 75V | 5pF @ 0V, 1MHz | Surface Mount | SQ-MELF, D | D-5D | -65°C ~ 175°C |
|
|
Microsemi |
DIODE GEN PURP 75V 300MA D-MELF |
3,348 |
|
Military, MIL-PRF-19500/578 | Standard | 75V | 300mA | 1.2V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 500nA @ 75V | 5pF @ 0V, 1MHz | Surface Mount | SQ-MELF, D | D-5D | -65°C ~ 175°C |
|
|
Microsemi |
DIODE GEN PURP 75V 200MA DO35 |
3,655 |
|
Military, MIL-PRF-19500/116 | Standard | 75V | 200mA | 1.2V @ 50mA | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 500nA @ 75V | 2.8pF @ 1.5V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 (DO-204AH) | -65°C ~ 175°C |
|
|
Microsemi |
DIODE GEN PURP 75V 200MA DO213AA |
7,326 |
|
Military, MIL-PRF-19500/116 | Standard | 75V | 200mA | 1.2V @ 50mA | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 500nA @ 75V | 2.8pF @ 1.5V, 1MHz | Surface Mount | DO-213AA | DO-213AA | -65°C ~ 175°C |
|
|
Renesas Electronics America |
DIODE SCHOTTKY 600V 10A TO220FP |
6,390 |
|
- | Schottky | 600V | 10A (DC) | 1.8V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 15ns | 10µA @ 600V | - | Surface Mount | TO-220-3 Full Pack | TO-220FP | -55°C ~ 150°C |
|
|
Renesas Electronics America |
DIODE SCHOTTKY 600V 15A TO220FP |
8,154 |
|
- | Schottky | 600V | 15A (DC) | 1.8V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 15ns | 10µA @ 600V | - | Through Hole | TO-220-2 Full Pack | TO-220FP-2L | -55°C ~ 150°C |
|
|
Renesas Electronics America |
DIODE GEN PURP 360V 10A LDPAK |
6,444 |
|
- | Standard | 360V | 10A (DC) | 1.7V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 360V | - | Surface Mount | SC-83 | 4-LDPAK | -55°C ~ 150°C |
|
|
Renesas Electronics America |
DIODE GEN PURP 360V 20A TO252 |
2,934 |
|
- | Standard | 360V | 20A | 1.7V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 1µA @ 360V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | -55°C ~ 150°C |
|
|
Renesas Electronics America |
DIODE GEN PURP 430V 10A LDPAK |
6,822 |
|
- | Standard | 430V | 10A | 1.9V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 430V | - | Surface Mount | SC-83 | 4-LDPAK | -55°C ~ 150°C |
|
|
Renesas Electronics America |
DIODE GP 430V 10A TO220FP-2L |
2,592 |
|
- | Standard | 430V | 10A | 1.9V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 430V | - | Through Hole | TO-220-2 Full Pack | TO-220FP-2L | -55°C ~ 150°C |
|
|
Renesas Electronics America |
DIODE GEN PURP 430V 20A TO252 |
4,878 |
|
- | Standard | 430V | 20A | 1.8V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 430V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | -55°C ~ 150°C |
|
|
Renesas Electronics America |
DIODE GEN PURP 430V 20A LDPAK |
3,240 |
|
- | Standard | 430V | 20A | 1.8V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 430V | - | Surface Mount | SC-83 | 4-LDPAK | -55°C ~ 150°C |
|
|
Renesas Electronics America |
DIODE GP 430V 20A TO220FP-2L |
3,348 |
|
- | Standard | 430V | 20A | 1.8V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 430V | - | Through Hole | TO-220-2 Full Pack | TO-220FP-2L | -55°C ~ 150°C |
|
|
Renesas Electronics America |
DIODE GEN PURP 600V 20A TO252 |
8,856 |
|
- | Standard | 600V | 20A | 3V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 600V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | -55°C ~ 150°C |
|
|
Renesas Electronics America |
DIODE GEN PURP 600V 20A LDPAK |
4,410 |
|
- | Standard | 600V | 20A | 3V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 600V | - | Surface Mount | SC-83 | 4-LDPAK | -55°C ~ 150°C |
|
|
Renesas Electronics America |
DIODE GEN PURP 600V 20A LDPAK |
8,802 |
|
- | Standard | 600V | 20A | 3V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 600V | - | Surface Mount | SC-83 | 4-LDPAK | -55°C ~ 150°C |
|
|
Renesas Electronics America |
DIODE GEN PURP 600V 20A TO220FL |
3,924 |
|
- | Standard | 600V | 20A | 3V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 600V | - | Through Hole | TO-220-3 Full Pack | TO-220FL | -55°C ~ 150°C |
|
|
Renesas Electronics America |
DIODE GEN PURP 600V 30A LDPAK |
5,760 |
|
- | Standard | 600V | 30A | 3V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 600V | - | Surface Mount | SC-83 | 4-LDPAK | -55°C ~ 150°C |
|
|
Diodes Incorporated |
DIODE SCHOTTKY 20V 1A DO41 |
2,286 |
|
- | Schottky | 20V | 1A | 500mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 20V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 125°C |
|
|
Diodes Incorporated |
DIODE SCHOTTKY 40V 1A DO41 |
5,058 |
|
- | Schottky | 40V | 1A | 500mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 125°C |
|
|
Diodes Incorporated |
DIODE SCHOTTKY 50V 1A DO41 |
7,542 |
|
- | Schottky | 50V | 1A | 700mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 50V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 150°C |