Rohm Semiconductor Transistors - FETs, MOSFETs - Single
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CategorySemiconductors / Transistors / Transistors - FETs, MOSFETs - Single
ManufacturerRohm Semiconductor
Records 814
Page 7/28
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Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Rohm Semiconductor |
RQ5E040RP IS A SMALL SIGNAL MOSF |
26,292 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 4A (Ta) | 4V, 10V | 45mOhm @ 4A, 10V | 1.5V @ 1mA | 10.5nC @ 5V | ±20V | 1000pF @ 10V | - | 700mW (Ta) | 150°C (TJ) | Surface Mount | TSMT3 | SC-96 |
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Rohm Semiconductor |
RF6E065BN IS LOW ON-RESISTANCE A |
22,536 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 6.5A (Ta) | 4.5V, 10V | 15.3mOhm @ 6.5A, 10V | 2.5V @ 1mA | 16.3nC @ 10V | ±20V | 680pF @ 15V | - | 910mW (Ta) | 150°C (TJ) | Surface Mount | TUMT6 | 6-SMD, Flat Leads |
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Rohm Semiconductor |
RQ6E035SP IS THE LOW ON - RESIST |
27,546 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 3.5A (Ta) | 4V, 10V | 65mOhm @ 3.5A, 10V | 2.5V @ 1mA | 9.2nC @ 5V | ±20V | 780pF @ 10V | - | 950mW (Ta) | 150°C (TJ) | Surface Mount | TSMT6 (SC-95) | SOT-23-6 Thin, TSOT-23-6 |
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Rohm Semiconductor |
RQ5A040ZP IS A SMALL SIGNAL MOSF |
29,364 |
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- | P-Channel | MOSFET (Metal Oxide) | 12V | 4A (Ta) | 1.5V, 4.5V | 30mOhm @ 4A, 4.5V | 1V @ 1mA | 30nC @ 4.5V | ±10V | 2350pF @ 6V | - | 700mW (Ta) | 150°C (TJ) | Surface Mount | TSMT3 | SC-96 |
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Rohm Semiconductor |
4V DRIVE NCH MOSFET (CORRESPONDS |
24,276 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 60V | 6.5A (Ta) | 4V, 10V | 37mOhm @ 6.5A, 10V | 2.5V @ 1mA | 16nC @ 5V | ±20V | 900pF @ 10V | - | 2W (Ta) | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Rohm Semiconductor |
4V DRIVE NCH MOSFET. MOSFETS ARE |
23,838 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 7A (Ta) | 4V, 10V | 28mOhm @ 7A, 10V | 2.5V @ 1mA | 5.8nC @ 5V | ±20V | 390pF @ 10V | - | 1.4W (Ta) | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Rohm Semiconductor |
4V DRIVE PCH MOSFET (CORRESPONDS |
19,530 |
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Automotive, AEC-Q101 | P-Channel | MOSFET (Metal Oxide) | 45V | 6A (Ta) | 4V, 10V | 36mOhm @ 6A, 10V | 2.5V @ 1mA | 32.2nC @ 5V | ±20V | 2700pF @ 10V | - | 2W (Ta) | 150°C | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Rohm Semiconductor |
RQ6L020SP IS A MOSFET WITH LOW O |
47,568 |
|
- | P-Channel | MOSFET (Metal Oxide) | 60V | 2A (Ta) | 4V, 10V | 210mOhm @ 2A, 10V | 3V @ 1mA | 7.2nC @ 5V | ±20V | 750pF @ 10V | - | 1.25W (Ta) | 150°C (TJ) | Surface Mount | TSMT6 (SC-95) | SOT-23-6 Thin, TSOT-23-6 |
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Rohm Semiconductor |
4V DRIVE NCH MOSFET. POWER MOSFE |
21,414 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 6.5A (Ta) | 4V, 10V | 37mOhm @ 6.5A, 10V | 2.5V @ 1mA | 16nC @ 5V | 20V | 900pF @ 10V | - | 2W (Ta) | 150°C | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Rohm Semiconductor |
RD3G400GN IS A POWER MOSFET WITH |
20,538 |
|
- | N-Channel | MOSFET (Metal Oxide) | 40V | 40A (Ta) | 4.5V, 10V | 7.5mOhm @ 40A, 10V | 2.5V @ 1mA | 19nC @ 10V | ±20V | 1410pF @ 20V | - | 26W (Ta) | 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
NCH 60V 30A MIDDLE POWER MOSFET |
25,374 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 9A (Ta), 30A (Tc) | 4.5V, 10V | 13.9mOhm @ 9A, 10V | 2.7V @ 300µA | 24.5nC @ 10V | ±20V | 1260pF @ 30V | - | 2W (Ta) | 150°C (TJ) | Surface Mount | 8-HSMT (3.2x3) | 8-PowerVDFN |
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Rohm Semiconductor |
NCH 100V 10A POWER MOSFET |
25,830 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 10A (Ta) | 4V, 10V | 133mOhm @ 5A, 10V | 2.5V @ 1mA | 18nC @ 10V | ±20V | 700pF @ 25V | - | 20W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
MIDDLE POWER MOSFET SERIES (SING |
20,292 |
|
- | P-Channel | MOSFET (Metal Oxide) | 30V | 9A (Ta) | 4V, 10V | 15.4mOhm @ 9A, 10V | 2.5V @ 1mA | 56nC @ 10V | ±20V | 3000pF @ 10V | - | 650mW (Ta) | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Rohm Semiconductor |
RD3P100SNFRA IS A POWER MOSFET W |
22,122 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 100V | 10A (Ta) | 4V, 10V | 133mOhm @ 5A, 10V | 2.5V @ 1mA | 18nC @ 10V | ±20V | 700pF @ 25V | - | 20W (Tc) | 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
RD3H200SNFRA IS THE HIGH RELIABI |
25,380 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 45V | 20A (Ta) | 4V, 10V | 28mOhm @ 20A, 10V | 2.5V @ 1mA | 12nC @ 5V | ±20V | 950pF @ 10V | - | 20W (Tc) | 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
RD3G500GN IS THE LOW ON - RESIST |
25,344 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 50A (Tc) | 4.5V, 10V | 4.9mOhm @ 50A, 10V | 2.5V @ 1mA | 31nC @ 10V | ±20V | 22800pF @ 20V | - | 35W (Tc) | 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
4V DRIVE NCH MOSFET (CORRESPONDS |
22,440 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 45V | 7A (Ta) | 4V, 10V | 25mOhm @ 7A, 10V | 2.5V @ 1mA | 16.8nC @ 5V | ±20V | 1000pF @ 10V | - | 2W (Ta) | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Rohm Semiconductor |
MOSFET LOW ON-RESISTANCE AND FAS |
19,830 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 4A (Tc) | 15V | 1.43Ohm @ 2A, 15V | 7V @ 450µA | 10.5nC @ 15V | ±30V | 260pF @ 100V | - | 60W (Tc) | 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
RS1E281BN IS LOW ON-RESISTANCE A |
22,662 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 28A (Ta), 80A (Tc) | 4.5V, 10V | 2.3mOhm @ 28A, 10V | 2.5V @ 1mA | 94nC @ 10V | ±20V | 5100pF @ 15V | - | 3W (Ta) | 150°C (TJ) | Surface Mount | 8-HSOP | 8-PowerTDFN |
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Rohm Semiconductor |
RD3L220SNFRA IS A AUTOMOTIVE GRA |
18,786 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 60V | 22A (Ta) | 4V, 10V | 26mOhm @ 22A, 10V | 3V @ 1mA | 30nC @ 10V | ±20V | 1500pF @ 10V | - | 20W (Tc) | 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
RS1E321GN IS A POWER MOSFET WITH |
20,298 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 32A (Ta), 80A (Tc) | 4.5V, 10V | 2.1mOhm @ 32A, 10V | 2.5V @ 1mA | 42.8nC @ 10V | ±20V | 2850pF @ 15V | - | 3W (Ta) | 150°C (TJ) | Surface Mount | 8-HSOP | 8-PowerTDFN |
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Rohm Semiconductor |
RS1L180GN IS LOW ON - RESISTANCE |
26,988 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 18A (Ta), 68A (Tc) | 4.5V, 10V | 5.6mOhm @ 18A, 10V | 2.5V @ 100µA | 63nC @ 10V | ±20V | 3230pF @ 30V | - | 3W (Ta) | 150°C (TJ) | Surface Mount | 8-HSOP | 8-PowerTDFN |
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Rohm Semiconductor |
RD3L08BGN IS A POWER MOSFET, SUI |
21,240 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 80A (Tc) | 4.5V, 10V | 5.5mOhm @ 80A, 10V | 2.5V @ 100µA | 71nC @ 10V | ±20V | 3620pF @ 30V | - | 119W (Tc) | 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
4V DRIVE PCH MOSFET (CORRESPONDS |
19,668 |
|
Automotive, AEC-Q101 | P-Channel | MOSFET (Metal Oxide) | 45V | 7A (Ta) | 4V, 10V | 27mOhm @ 7A, 10V | 2.5V @ 1mA | 47.6nC @ 5V | ±20V | 4100pF @ 10V | - | 2W (Ta) | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Rohm Semiconductor |
RS1E260AT IS THE HIGH RELIABILIT |
22,626 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 26A (Ta), 80A (Tc) | 4.5V, 10V | 3.1mOhm @ 26A, 10V | 2.5V @ 1mA | 175nC @ 10V | ±20V | 7850pF @ 15V | - | 3W (Ta) | 150°C (TJ) | Surface Mount | 8-HSOP | 8-PowerTDFN |
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Rohm Semiconductor |
R6007JNX IS A POWER MOSFET WITH |
21,210 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 7A (Tc) | 15V | 780mOhm @ 3.5A, 15V | 7V @ 1mA | 17.5nC @ 15V | ±30V | 475pF @ 100V | - | 46W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Rohm Semiconductor |
R6009JNX IS A POWER MOSFET WITH |
18,864 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 9A (Tc) | 15V | 585mOhm @ 4.5A, 15V | 7V @ 1.38mA | 22nC @ 15V | ±30V | 645pF @ 100V | - | 53W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Rohm Semiconductor |
R6018JNX IS A POWER MOSFET WITH |
19,680 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 18A (Tc) | 15V | 286mOhm @ 9A, 15V | 7V @ 4.2mA | 42nC @ 15V | ±30V | 1300pF @ 100V | - | 72W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Rohm Semiconductor |
AUTOMOTIVE GRADE N-CHANNEL SIC P |
7,512 |
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Automotive, AEC-Q101 | N-Channel | SiCFET (Silicon Carbide) | 650V | 21A (Tc) | 18V | 156mOhm @ 6.7A, 18V | 5.6V @ 3.33mA | 38nC @ 18V | +22V, -4V | 460pF @ 500V | - | 103W | 175°C (TJ) | Through Hole | TO-247N | TO-247-3 |
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Rohm Semiconductor |
AUTOMOTIVE GRADE N-CHANNEL SIC P |
12,780 |
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Automotive, AEC-Q101 | N-Channel | SiCFET (Silicon Carbide) | 1200V | 17A (Tc) | 18V | 208mOhm @ 5A, 18V | 5.6V @ 2.5mA | 42nC @ 18V | +22V, -4V | 398pF @ 800V | - | 103W | 175°C (TJ) | Through Hole | TO-247N | TO-247-3 |