Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

ZXMN4A06GTA

ZXMN4A06GTA

For Reference Only

Part Number ZXMN4A06GTA
PNEDA Part # ZXMN4A06GTA
Description MOSFET N-CH 40V 5A SOT223
Manufacturer Diodes Incorporated
Unit Price Request a Quote
In Stock 550,950
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 30 - Apr 4 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

ZXMN4A06GTA Resources

Brand Diodes Incorporated
ECAD Module ECAD
Mfr. Part NumberZXMN4A06GTA
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
ZXMN4A06GTA, ZXMN4A06GTA Datasheet (Total Pages: 7, Size: 676.37 KB)
PDFZXMN4A06GTA Datasheet Cover
ZXMN4A06GTA Datasheet Page 2 ZXMN4A06GTA Datasheet Page 3 ZXMN4A06GTA Datasheet Page 4 ZXMN4A06GTA Datasheet Page 5 ZXMN4A06GTA Datasheet Page 6 ZXMN4A06GTA Datasheet Page 7

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • ZXMN4A06GTA Datasheet
  • where to find ZXMN4A06GTA
  • Diodes Incorporated

  • Diodes Incorporated ZXMN4A06GTA
  • ZXMN4A06GTA PDF Datasheet
  • ZXMN4A06GTA Stock

  • ZXMN4A06GTA Pinout
  • Datasheet ZXMN4A06GTA
  • ZXMN4A06GTA Supplier

  • Diodes Incorporated Distributor
  • ZXMN4A06GTA Price
  • ZXMN4A06GTA Distributor

ZXMN4A06GTA Specifications

ManufacturerDiodes Incorporated
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs50mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs18.2nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds770pF @ 40V
FET Feature-
Power Dissipation (Max)2W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-223
Package / CaseTO-261-4, TO-261AA

The Products You May Be Interested In

2SK2963(TE12L,F)

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

1A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

700mOhm @ 500mA, 10V

Vgs(th) (Max) @ Id

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

6.3nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

140pF @ 10V

FET Feature

-

Power Dissipation (Max)

500mW (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PW-MINI

Package / Case

TO-243AA

AUIRL3705ZS

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

75A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

8mOhm @ 52A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

60nC @ 5V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

2880pF @ 25V

FET Feature

-

Power Dissipation (Max)

130W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

AUIRLU2905

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

42A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

27mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

48nC @ 5V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

1700pF @ 25V

FET Feature

-

Power Dissipation (Max)

110W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I-PAK

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

MMBF170Q-13-F

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

500mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

5Ohm @ 200mA, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

40pF @ 10V

FET Feature

-

Power Dissipation (Max)

300mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23

Package / Case

TO-236-3, SC-59, SOT-23-3

Manufacturer

NXP USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

75V

Current - Continuous Drain (Id) @ 25°C

75A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

5.5mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

95nC @ 5V

Vgs (Max)

±15V

Input Capacitance (Ciss) (Max) @ Vds

8770pF @ 25V

FET Feature

-

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Recently Sold

PTN3363BSMP

PTN3363BSMP

NXP

IC DVI/HDMI LVL SHIFTER 32HVQFN

TCS-DL004-500-WH

TCS-DL004-500-WH

Bourns

SUPPRESSOR TCS DUAL 40V 500MA

GCM1885C1H6R8BA16D

GCM1885C1H6R8BA16D

Murata

CAP CER 6.8PF 50V C0G/NP0 0603

BNX026H01L

BNX026H01L

Murata

FILTER LC 10UF SMD

MC9S08DN16CLC

MC9S08DN16CLC

NXP

IC MCU 8BIT 16KB FLASH 32LQFP

MAX531BCPD

MAX531BCPD

Maxim Integrated

IC DAC 12BIT V-OUT 14DIP

SC2596SETRT

SC2596SETRT

Semtech

IC REG LDO DDR 1OUT 8SOIC

NUC2401MNTAG

NUC2401MNTAG

ON Semiconductor

CMC 100MA 2LN 90 OHM SMD

MAX3002EUP+

MAX3002EUP+

Maxim Integrated

IC TRNSLTR BIDIRECTIONAL 20TSSOP

CRA2512-FZ-R020ELF

CRA2512-FZ-R020ELF

Bourns

RES 0.02 OHM 1% 3W 2512

SBR3U60P1-7

SBR3U60P1-7

Diodes Incorporated

DIODE SBR 60V 3A POWERDI123

MPC9448ACR2

MPC9448ACR2

IDT, Integrated Device Technology

IC CLK BUFFER 1:12 350MHZ 32TQFP