Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

ZXMN3A02X8TA

ZXMN3A02X8TA

For Reference Only

Part Number ZXMN3A02X8TA
PNEDA Part # ZXMN3A02X8TA
Description MOSFET N-CH 30V 5.3A 8-MSOP
Manufacturer Diodes Incorporated
Unit Price Request a Quote
In Stock 6,084
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 27 - Dec 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

ZXMN3A02X8TA Resources

Brand Diodes Incorporated
ECAD Module ECAD
Mfr. Part NumberZXMN3A02X8TA
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
ZXMN3A02X8TA, ZXMN3A02X8TA Datasheet (Total Pages: 7, Size: 454.97 KB)
PDFZXMN3A02X8TA Datasheet Cover
ZXMN3A02X8TA Datasheet Page 2 ZXMN3A02X8TA Datasheet Page 3 ZXMN3A02X8TA Datasheet Page 4 ZXMN3A02X8TA Datasheet Page 5 ZXMN3A02X8TA Datasheet Page 6 ZXMN3A02X8TA Datasheet Page 7

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • ZXMN3A02X8TA Datasheet
  • where to find ZXMN3A02X8TA
  • Diodes Incorporated

  • Diodes Incorporated ZXMN3A02X8TA
  • ZXMN3A02X8TA PDF Datasheet
  • ZXMN3A02X8TA Stock

  • ZXMN3A02X8TA Pinout
  • Datasheet ZXMN3A02X8TA
  • ZXMN3A02X8TA Supplier

  • Diodes Incorporated Distributor
  • ZXMN3A02X8TA Price
  • ZXMN3A02X8TA Distributor

ZXMN3A02X8TA Specifications

ManufacturerDiodes Incorporated
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C5.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs25mOhm @ 12A, 10V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs26.8nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1400pF @ 25V
FET Feature-
Power Dissipation (Max)1.1W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-MSOP
Package / Case8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

The Products You May Be Interested In

SIHP12N50E-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

10.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

380mOhm @ 6A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

50nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

886pF @ 100V

FET Feature

-

Power Dissipation (Max)

114W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

Manufacturer

IXYS

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

180A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

NVMFS5C450NWFAFT3G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

Automotive, AEC-Q101

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

24A (Ta), 102A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

3.3mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

3.5V @ 65µA

Gate Charge (Qg) (Max) @ Vgs

23nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1600pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.6W (Ta), 68W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

5-DFN (5x6) (8-SOFL)

Package / Case

8-PowerTDFN, 5 Leads

SCH1337-TL-H

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

2A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

150mOhm @ 1A, 10V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

3.9nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

172pF @ 10V

FET Feature

-

Power Dissipation (Max)

800mW (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-SCH

Package / Case

SOT-563, SOT-666

APT50M75JLLU2

Microsemi

Manufacturer

Microsemi Corporation

Series

POWER MOS 7®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

51A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

75mOhm @ 25.5A, 10V

Vgs(th) (Max) @ Id

5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

123nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

5590pF @ 25V

FET Feature

-

Power Dissipation (Max)

290W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Supplier Device Package

SOT-227

Package / Case

SOT-227-4, miniBLOC

Recently Sold

W25X40CLSSIG

W25X40CLSSIG

Winbond Electronics

IC FLASH 4M SPI 104MHZ 8SOIC

TAJA475K016RNJ

TAJA475K016RNJ

CAP TANT 4.7UF 10% 16V 1206

7447709220

7447709220

Wurth Electronics

FIXED IND 22UH 5.3A 28 MOHM SMD

DF10M

DF10M

Diodes Incorporated

BRIDGE RECT 1PHASE 1KV 1A DFM

06035C104KAT2A

06035C104KAT2A

CAP CER 0.1UF 50V X7R 0603

MCP73832T-2ATI/OT

MCP73832T-2ATI/OT

Microchip Technology

IC LI-ION/LI-POLY CTRLR SOT23-5

SMAJ36CA

SMAJ36CA

Littelfuse

TVS DIODE 36V 58.1V DO214AC

BLM31PG391SN1L

BLM31PG391SN1L

Murata

FERRITE BEAD 390 OHM 1206 1LN

74HC160N,652

74HC160N,652

NXP

IC SYNC BCD DECADE COUNT 16DIP

ISL6124IRZA-T

ISL6124IRZA-T

Renesas Electronics America Inc.

IC POWER SUPPLY SEQUENCER 24QFN

EP4CE40F23I7N

EP4CE40F23I7N

Intel

IC FPGA 328 I/O 484FBGA

ADG506AKR

ADG506AKR

Analog Devices

IC MULTIPLEXER 16X1 28SOIC