Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

ZXMN10A11K

ZXMN10A11K

For Reference Only

Part Number ZXMN10A11K
PNEDA Part # ZXMN10A11K
Description MOSFET N-CH 100V 2.4A DPAK
Manufacturer Diodes Incorporated
Unit Price Request a Quote
In Stock 17,304
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 3 - Apr 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

ZXMN10A11K Resources

Brand Diodes Incorporated
ECAD Module ECAD
Mfr. Part NumberZXMN10A11K
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
ZXMN10A11K, ZXMN10A11K Datasheet (Total Pages: 8, Size: 664.63 KB)
PDFZXMN10A11KTC Datasheet Cover
ZXMN10A11KTC Datasheet Page 2 ZXMN10A11KTC Datasheet Page 3 ZXMN10A11KTC Datasheet Page 4 ZXMN10A11KTC Datasheet Page 5 ZXMN10A11KTC Datasheet Page 6 ZXMN10A11KTC Datasheet Page 7 ZXMN10A11KTC Datasheet Page 8

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • ZXMN10A11K Datasheet
  • where to find ZXMN10A11K
  • Diodes Incorporated

  • Diodes Incorporated ZXMN10A11K
  • ZXMN10A11K PDF Datasheet
  • ZXMN10A11K Stock

  • ZXMN10A11K Pinout
  • Datasheet ZXMN10A11K
  • ZXMN10A11K Supplier

  • Diodes Incorporated Distributor
  • ZXMN10A11K Price
  • ZXMN10A11K Distributor

ZXMN10A11K Specifications

ManufacturerDiodes Incorporated
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C2.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs350mOhm @ 2.6A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs5.4nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds274pF @ 50V
FET Feature-
Power Dissipation (Max)2.11W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252-3
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

The Products You May Be Interested In

NTA4001NT1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

238mA (Tj)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

3Ohm @ 10mA, 4.5V

Vgs(th) (Max) @ Id

1.5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

20pF @ 5V

FET Feature

-

Power Dissipation (Max)

300mW (Tj)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SC-75, SOT-416

Package / Case

SC-75, SOT-416

IRFD214

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

250V

Current - Continuous Drain (Id) @ 25°C

450mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2Ohm @ 270mA, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

8.2nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

140pF @ 25V

FET Feature

-

Power Dissipation (Max)

1W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

4-DIP, Hexdip, HVMDIP

Package / Case

4-DIP (0.300", 7.62mm)

SSM6J507NU,LF

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

U-MOSVI

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

10A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

20mOhm @ 4A, 10V

Vgs(th) (Max) @ Id

2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

20.4nC @ 4.5V

Vgs (Max)

+20V, -25V

Input Capacitance (Ciss) (Max) @ Vds

1150pF @ 15V

FET Feature

-

Power Dissipation (Max)

1.25W (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-UDFNB (2x2)

Package / Case

6-WDFN Exposed Pad

TSM033NA03CR RLG

Taiwan Semiconductor Corporation

Manufacturer

Taiwan Semiconductor Corporation

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

129A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

3.3mOhm @ 21A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

31nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1850pF @ 15V

FET Feature

-

Power Dissipation (Max)

96W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-PDFN (5x6)

Package / Case

8-PowerTDFN

SI7308DN-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

58mOhm @ 5.4A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

20nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

665pF @ 15V

FET Feature

-

Power Dissipation (Max)

3.2W (Ta), 19.8W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® 1212-8

Package / Case

PowerPAK® 1212-8

Recently Sold

LNJ208R8ARA

LNJ208R8ARA

Panasonic Electronic Components

LED RED SS TYPE LED SMD

SRP4020-2R2M

SRP4020-2R2M

Bourns

FIXED IND 2.2UH 3.9A 40 MOHM SMD

TSM2323CX RFG

TSM2323CX RFG

Taiwan Semiconductor Corporation

MOSFET P-CHANNEL 20V 4.7A SOT23

74HC14DR2G

74HC14DR2G

ON Semiconductor

IC INVERTER SCHMITT 6CH 14SOIC

ADM1087AKSZ-REEL7

ADM1087AKSZ-REEL7

Analog Devices

IC SIMPLE SEQUENCER OD SC70-6

FDMF6708N

FDMF6708N

ON Semiconductor

MODULE DRMOS 50A 40PQFN

MBR0540-TP

MBR0540-TP

Micro Commercial Co

DIODE SCHOTTKY 40V 500MA SOD123

UCLAMP2804L.TCT

UCLAMP2804L.TCT

Semtech

TVS DIODE 2.8V 10V 8SOIC

7443556350

7443556350

Wurth Electronics

FIXED IND 3.5UH 22.5A 3.1 MOHM

B39162B4300F210

B39162B4300F210

Qualcomm

FILTER SAW 1.575GHZ 5SMD

SRV05-4.TCT

SRV05-4.TCT

Semtech

TVS DIODE 5V 17.5V SOT23-6

AD5676RBRUZ

AD5676RBRUZ

Analog Devices

IC DAC 16BIT V-OUT 20TSSOP