Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

ZXM66N03N8TA

ZXM66N03N8TA

For Reference Only

Part Number ZXM66N03N8TA
PNEDA Part # ZXM66N03N8TA
Description MOSFET N-CH 30V 9A 8-SOIC
Manufacturer Diodes Incorporated
Unit Price Request a Quote
In Stock 4,050
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 27 - Dec 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

ZXM66N03N8TA Resources

Brand Diodes Incorporated
ECAD Module ECAD
Mfr. Part NumberZXM66N03N8TA
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
ZXM66N03N8TA, ZXM66N03N8TA Datasheet (Total Pages: 4, Size: 81.95 KB)
PDFZXM66N03N8TA Datasheet Cover
ZXM66N03N8TA Datasheet Page 2 ZXM66N03N8TA Datasheet Page 3 ZXM66N03N8TA Datasheet Page 4

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • ZXM66N03N8TA Datasheet
  • where to find ZXM66N03N8TA
  • Diodes Incorporated

  • Diodes Incorporated ZXM66N03N8TA
  • ZXM66N03N8TA PDF Datasheet
  • ZXM66N03N8TA Stock

  • ZXM66N03N8TA Pinout
  • Datasheet ZXM66N03N8TA
  • ZXM66N03N8TA Supplier

  • Diodes Incorporated Distributor
  • ZXM66N03N8TA Price
  • ZXM66N03N8TA Distributor

ZXM66N03N8TA Specifications

ManufacturerDiodes Incorporated
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs15mOhm @ 7.3A, 10V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)2.5W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SO
Package / Case8-SOIC (0.154", 3.90mm Width)

The Products You May Be Interested In

ZVN3306ASTOA

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

270mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

5Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id

2.4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

35pF @ 18V

FET Feature

-

Power Dissipation (Max)

625mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

E-Line (TO-92 compatible)

Package / Case

E-Line-3

TPH3R003PL,LQ

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

U-MOSIX-H

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

88A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

4.2mOhm @ 44A, 4.5V

Vgs(th) (Max) @ Id

2.1V @ 300µA

Gate Charge (Qg) (Max) @ Vgs

50nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3825pF @ 15V

FET Feature

-

Power Dissipation (Max)

90W (Tc)

Operating Temperature

175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SOP Advance (5x5)

Package / Case

8-PowerVDFN

STF9NM60N

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™ II

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

6.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

745mOhm @ 3.25A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

17.4nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

452pF @ 50V

FET Feature

-

Power Dissipation (Max)

25W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220FP

Package / Case

TO-220-3 Full Pack

IRF9540PBF

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

19A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

200mOhm @ 11A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

61nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1400pF @ 25V

FET Feature

-

Power Dissipation (Max)

150W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

FDMS8460

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

25A (Ta), 49A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

2.2mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

110nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

7205pF @ 20V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 104W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-PQFN (5x6)

Package / Case

8-PowerTDFN

Recently Sold

A6H-8101

A6H-8101

Omron Electronics Inc-EMC Div

SWITCH SLIDE DIP SPST 25MA 24V

NLC565050T-101K-PF

NLC565050T-101K-PF

TDK

FIXED IND 100UH 250MA 1.6 OHM

RJH60D5BDPQ-E0#T2

RJH60D5BDPQ-E0#T2

Renesas Electronics America

IGBT 600V 75A 200W TO-247

LAN8740AI-EN

LAN8740AI-EN

Microchip Technology

IC TRANSCEIVER FULL 1/1 32SQFN

MMSZ4699T1G

MMSZ4699T1G

ON Semiconductor

DIODE ZENER 12V 500MW SOD123

DF10M

DF10M

Diodes Incorporated

BRIDGE RECT 1PHASE 1KV 1A DFM

MIC2026-2YM

MIC2026-2YM

Microchip Technology

IC PW DIST SW DUAL 8SOIC

SMAJ36CA

SMAJ36CA

Littelfuse

TVS DIODE 36V 58.1V DO214AC

JANTX1N4148-1

JANTX1N4148-1

Microsemi

DIODE GEN PURP 75V 200MA DO35

STPS2H100U

STPS2H100U

STMicroelectronics

DIODE SCHOTTKY 100V 2A SMB

ISL3259EIBZ-T

ISL3259EIBZ-T

Renesas Electronics America Inc.

IC TRANSCEIVER HALF 1/1 8SOIC

FGH40N60SMD

FGH40N60SMD

ON Semiconductor

IGBT 600V 80A 349W TO-247-3