Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

ZVN4206ASTOA

ZVN4206ASTOA

For Reference Only

Part Number ZVN4206ASTOA
PNEDA Part # ZVN4206ASTOA
Description MOSFET N-CH 60V 0.6A TO92-3
Manufacturer Diodes Incorporated
Unit Price Request a Quote
In Stock 5,076
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 4 - Apr 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

ZVN4206ASTOA Resources

Brand Diodes Incorporated
ECAD Module ECAD
Mfr. Part NumberZVN4206ASTOA
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
ZVN4206ASTOA, ZVN4206ASTOA Datasheet (Total Pages: 3, Size: 103.3 KB)
PDFZVN4206ASTOB Datasheet Cover
ZVN4206ASTOB Datasheet Page 2 ZVN4206ASTOB Datasheet Page 3

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • ZVN4206ASTOA Datasheet
  • where to find ZVN4206ASTOA
  • Diodes Incorporated

  • Diodes Incorporated ZVN4206ASTOA
  • ZVN4206ASTOA PDF Datasheet
  • ZVN4206ASTOA Stock

  • ZVN4206ASTOA Pinout
  • Datasheet ZVN4206ASTOA
  • ZVN4206ASTOA Supplier

  • Diodes Incorporated Distributor
  • ZVN4206ASTOA Price
  • ZVN4206ASTOA Distributor

ZVN4206ASTOA Specifications

ManufacturerDiodes Incorporated
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C600mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Rds On (Max) @ Id, Vgs1Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds100pF @ 25V
FET Feature-
Power Dissipation (Max)700mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageE-Line (TO-92 compatible)
Package / CaseE-Line-3

The Products You May Be Interested In

2SK4085LS

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

11A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

430mOhm @ 8A, 10V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

46.6nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1200pF @ 30V

FET Feature

-

Power Dissipation (Max)

2W (Ta), 40W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220FI(LS)

Package / Case

TO-220-3 Full Pack

TPCA8003-H(TE12LQM

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

35A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

6.6mOhm @ 18A, 10V

Vgs(th) (Max) @ Id

2.3V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

25nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1465pF @ 10V

FET Feature

-

Power Dissipation (Max)

1.6W (Ta), 45W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SOP Advance (5x5)

Package / Case

8-PowerVDFN

IPB45N06S3L-13

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

45A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

13.1mOhm @ 26A, 10V

Vgs(th) (Max) @ Id

2.2V @ 30µA

Gate Charge (Qg) (Max) @ Vgs

75nC @ 10V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

3600pF @ 25V

FET Feature

-

Power Dissipation (Max)

65W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO263-3-2

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

MSC090SMA070B

Microsemi

Manufacturer

Microsemi Corporation

Series

-

FET Type

N-Channel

Technology

SiC (Silicon Carbide Junction Transistor)

Drain to Source Voltage (Vdss)

700V

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247-3

Package / Case

TO-247-3

SIR680DP-T1-RE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET® Gen IV

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

80V

Current - Continuous Drain (Id) @ 25°C

100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

7.5V, 10V

Rds On (Max) @ Id, Vgs

2.9mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

3.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

81nC @ 7.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5150pF @ 40V

FET Feature

-

Power Dissipation (Max)

104W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SO-8

Package / Case

PowerPAK® SO-8

Recently Sold

74HC132D,653

74HC132D,653

Nexperia

IC GATE NAND SCHMITT 4CH 14SO

WSL1206R0500FEA

WSL1206R0500FEA

Vishay Dale

RES 0.05 OHM 1% 1/4W 1206

MT29F2G16ABBEAHC-AIT:E

MT29F2G16ABBEAHC-AIT:E

Micron Technology Inc.

IC FLASH 2G PARALLEL FBGA

AUIPS2031R

AUIPS2031R

Infineon Technologies

IC SW IPS 1CH LOW SIDE DPAK

UUX1E470MCL1GS

UUX1E470MCL1GS

Nichicon

CAP ALUM 47UF 20% 25V SMD

3224W-1-502E

3224W-1-502E

Bourns

TRIMMER 5K OHM 0.25W J LEAD TOP

PSMN4R5-30YLC,115

PSMN4R5-30YLC,115

Nexperia

MOSFET N-CH 30V 84A LFPAK

ESD9X5.0ST5G

ESD9X5.0ST5G

ON Semiconductor

TVS DIODE 5V 12.3V SOD923

RJH60D5BDPQ-E0#T2

RJH60D5BDPQ-E0#T2

Renesas Electronics America

IGBT 600V 75A 200W TO-247

NC7SZ125M5X

NC7SZ125M5X

ON Semiconductor

IC BUF NON-INVERT 5.5V SOT23-5

4TPE100MZB

4TPE100MZB

Panasonic Electronic Components

CAP TANT POLY 100UF 4V 1411

RCLAMP3654P.TCT

RCLAMP3654P.TCT

Semtech

TVS DIODE 5.5V 30V SLP1616P6