XBS306P11R-G
For Reference Only
| Part Number | XBS306P11R-G |
| PNEDA Part # | XBS306P11R-G |
| Description | SCHOTTKY BARRIER DIODE |
| Manufacturer | Torex Semiconductor Ltd |
| Unit Price | Request a Quote |
| In Stock | 7,920 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Apr 4 - Apr 9 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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XBS306P11R-G Resources
| Brand | Torex Semiconductor Ltd |
| ECAD Module |
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| Mfr. Part Number | XBS306P11R-G |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
| Datasheet |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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Notes
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XBS306P11R-G Specifications
| Manufacturer | Torex Semiconductor Ltd |
| Series | * |
| Diode Type | - |
| Voltage - DC Reverse (Vr) (Max) | - |
| Current - Average Rectified (Io) | - |
| Voltage - Forward (Vf) (Max) @ If | - |
| Speed | - |
| Reverse Recovery Time (trr) | - |
| Current - Reverse Leakage @ Vr | - |
| Capacitance @ Vr, F | - |
| Mounting Type | - |
| Package / Case | - |
| Supplier Device Package | - |
| Operating Temperature - Junction | - |
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Manufacturer Taiwan Semiconductor Corporation Series Automotive, AEC-Q101 Diode Type Standard Voltage - DC Reverse (Vr) (Max) 150V Current - Average Rectified (Io) 16A Voltage - Forward (Vf) (Max) @ If 950mV @ 8A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 35ns Current - Reverse Leakage @ Vr 10µA @ 150V Capacitance @ Vr, F 85pF @ 4V, 1MHz Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package TO-247AD (TO-3P) Operating Temperature - Junction -55°C ~ 150°C |
Manufacturer Comchip Technology Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 150V Current - Average Rectified (Io) 2A Voltage - Forward (Vf) (Max) @ If 820mV @ 2A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 500µA @ 150V Capacitance @ Vr, F 30pF @ 4V, 1MHz Mounting Type Surface Mount Package / Case DO-214AA, SMB Supplier Device Package DO-214AA (SMB) Operating Temperature - Junction -50°C ~ 175°C |
Manufacturer ON Semiconductor Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 600V Current - Average Rectified (Io) 50A Voltage - Forward (Vf) (Max) @ If 1.6V @ 50A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 75ns Current - Reverse Leakage @ Vr 250µA @ 600V Capacitance @ Vr, F - Mounting Type Through Hole Package / Case TO-247-2 Supplier Device Package TO-247-2 Operating Temperature - Junction -65°C ~ 175°C |
Manufacturer Infineon Technologies Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 4500V Current - Average Rectified (Io) 510A Voltage - Forward (Vf) (Max) @ If 3.9V @ 1200A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 100mA @ 4500V Capacitance @ Vr, F - Mounting Type Chassis Mount Package / Case DO-200AB, B-PUK Supplier Device Package - Operating Temperature - Junction -40°C ~ 125°C |
