W987D6HBGX6E
For Reference Only
| Part Number | W987D6HBGX6E |
| PNEDA Part # | W987D6HBGX6E |
| Description | IC DRAM 128M PARALLEL 54VFBGA |
| Manufacturer | Winbond Electronics |
| Unit Price | Request a Quote |
| In Stock | 12,452 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Apr 18 - Apr 23 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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W987D6HBGX6E Resources
| Brand | Winbond Electronics |
| ECAD Module |
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| Mfr. Part Number | W987D6HBGX6E |
| Category | Semiconductors › Memory ICs › Memory |
| Datasheet |
Payment Method
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- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
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- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
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W987D6HBGX6E Specifications
| Manufacturer | Winbond Electronics |
| Series | - |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - Mobile LPSDR |
| Memory Size | 128Mb (8M x 16) |
| Memory Interface | Parallel |
| Clock Frequency | 166MHz |
| Write Cycle Time - Word, Page | 15ns |
| Access Time | 5.4ns |
| Voltage - Supply | 1.7V ~ 1.95V |
| Operating Temperature | -25°C ~ 85°C (TC) |
| Mounting Type | Surface Mount |
| Package / Case | 54-TFBGA |
| Supplier Device Package | 54-VFBGA (8x9) |
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Manufacturer Alliance Memory, Inc. Series Automotive, AEC-Q100 Memory Type Volatile Memory Format DRAM Technology SDRAM - DDR3 Memory Size 4Gb (512M x 8) Memory Interface Parallel Clock Frequency 800MHz Write Cycle Time - Word, Page 15ns Access Time 20ns Voltage - Supply 1.425V ~ 1.575V Operating Temperature -40°C ~ 105°C (TC) Mounting Type Surface Mount Package / Case 78-VFBGA Supplier Device Package 78-FBGA (9x10.5) |
