VT6T1T2R
For Reference Only
| Part Number | VT6T1T2R |
| PNEDA Part # | VT6T1T2R |
| Description | PNP+PNP GENERAL PURPOSE AMPLIFIC |
| Manufacturer | Rohm Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 95,676 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 23 - Nov 28 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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VT6T1T2R Resources
| Brand | Rohm Semiconductor |
| ECAD Module |
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| Mfr. Part Number | VT6T1T2R |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - Arrays |
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VT6T1T2R Specifications
| Manufacturer | Rohm Semiconductor |
| Series | - |
| Transistor Type | 2 PNP (Dual) |
| Current - Collector (Ic) (Max) | 200mA |
| Voltage - Collector Emitter Breakdown (Max) | 20V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 6V |
| Power - Max | 150mW |
| Frequency - Transition | 350MHz |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 6-SMD, Flat Leads |
| Supplier Device Package | VMT6 |
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Manufacturer Microsemi Corporation Series - Transistor Type 2 PNP (Dual) Current - Collector (Ic) (Max) 50mA Voltage - Collector Emitter Breakdown (Max) 60V Vce Saturation (Max) @ Ib, Ic 250mV @ 100µA, 1mA Current - Collector Cutoff (Max) 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 1mA, 5V Power - Max 350mW Frequency - Transition - Operating Temperature -65°C ~ 200°C (TJ) Mounting Type Through Hole Package / Case TO-78-6 Metal Can Supplier Device Package TO-78-6 |
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