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VS-SD303C08S10C

VS-SD303C08S10C

For Reference Only

Part Number VS-SD303C08S10C
PNEDA Part # VS-SD303C08S10C
Description DIODE GEN PURP 800V 350A DO200AA
Manufacturer Vishay Semiconductor Diodes Division
Unit Price Request a Quote
In Stock 6,480
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Dec 26 - Dec 31 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

VS-SD303C08S10C Resources

Brand Vishay Semiconductor Diodes Division
ECAD Module ECAD
Mfr. Part NumberVS-SD303C08S10C
CategorySemiconductorsDiodes & RectifiersRectifiers - Single
Datasheet
VS-SD303C08S10C, VS-SD303C08S10C Datasheet (Total Pages: 9, Size: 283.35 KB)
PDFVS-SD303C25S20C Datasheet Cover
VS-SD303C25S20C Datasheet Page 2 VS-SD303C25S20C Datasheet Page 3 VS-SD303C25S20C Datasheet Page 4 VS-SD303C25S20C Datasheet Page 5 VS-SD303C25S20C Datasheet Page 6 VS-SD303C25S20C Datasheet Page 7 VS-SD303C25S20C Datasheet Page 8 VS-SD303C25S20C Datasheet Page 9

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VS-SD303C08S10C Specifications

ManufacturerVishay Semiconductor Diodes Division
Series-
Diode TypeStandard
Voltage - DC Reverse (Vr) (Max)800V
Current - Average Rectified (Io)350A
Voltage - Forward (Vf) (Max) @ If2.26V @ 1100A
SpeedStandard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)1µs
Current - Reverse Leakage @ Vr35mA @ 800V
Capacitance @ Vr, F-
Mounting TypeClamp On
Package / CaseDO-200AA, A-PUK
Supplier Device PackageDO-200AA, A-PUK
Operating Temperature - Junction-

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