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VS-GT300YH120N

VS-GT300YH120N

For Reference Only

Part Number VS-GT300YH120N
PNEDA Part # VS-GT300YH120N
Description IGBT 1200V 341A 1042W DIAP
Manufacturer Vishay Semiconductor Diodes Division
Unit Price Request a Quote
In Stock 7,650
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

VS-GT300YH120N Resources

Brand Vishay Semiconductor Diodes Division
ECAD Module ECAD
Mfr. Part NumberVS-GT300YH120N
CategorySemiconductorsTransistorsTransistors - IGBTs - Modules
Datasheet
VS-GT300YH120N, VS-GT300YH120N Datasheet (Total Pages: 10, Size: 187.58 KB)
PDFVS-GT300YH120N Datasheet Cover
VS-GT300YH120N Datasheet Page 2 VS-GT300YH120N Datasheet Page 3 VS-GT300YH120N Datasheet Page 4 VS-GT300YH120N Datasheet Page 5 VS-GT300YH120N Datasheet Page 6 VS-GT300YH120N Datasheet Page 7 VS-GT300YH120N Datasheet Page 8 VS-GT300YH120N Datasheet Page 9 VS-GT300YH120N Datasheet Page 10

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VS-GT300YH120N Specifications

ManufacturerVishay Semiconductor Diodes Division
Series-
IGBT TypeTrench
ConfigurationHalf Bridge
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)341A
Power - Max1042W
Vce(on) (Max) @ Vge, Ic2.17V @ 15V, 300A (Typ)
Current - Collector Cutoff (Max)300µA
Input Capacitance (Cies) @ Vce36nF @ 30V
InputStandard
NTC ThermistorNo
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Package / CaseDouble INT-A-PAK (3 + 8)
Supplier Device PackageDouble INT-A-PAK

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