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VS-ETH3006S-M3

VS-ETH3006S-M3

For Reference Only

Part Number VS-ETH3006S-M3
PNEDA Part # VS-ETH3006S-M3
Description DIODE GEN PURP 600V 30A D2PAK
Manufacturer Vishay Semiconductor Diodes Division
Unit Price Request a Quote
In Stock 2,574
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 25 - Nov 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

VS-ETH3006S-M3 Resources

Brand Vishay Semiconductor Diodes Division
ECAD Module ECAD
Mfr. Part NumberVS-ETH3006S-M3
CategorySemiconductorsDiodes & RectifiersRectifiers - Single
Datasheet
VS-ETH3006S-M3, VS-ETH3006S-M3 Datasheet (Total Pages: 8, Size: 209.24 KB)
PDFVS-ETH3006STRR-M3 Datasheet Cover
VS-ETH3006STRR-M3 Datasheet Page 2 VS-ETH3006STRR-M3 Datasheet Page 3 VS-ETH3006STRR-M3 Datasheet Page 4 VS-ETH3006STRR-M3 Datasheet Page 5 VS-ETH3006STRR-M3 Datasheet Page 6 VS-ETH3006STRR-M3 Datasheet Page 7 VS-ETH3006STRR-M3 Datasheet Page 8

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VS-ETH3006S-M3 Specifications

ManufacturerVishay Semiconductor Diodes Division
SeriesFRED Pt®
Diode TypeStandard
Voltage - DC Reverse (Vr) (Max)600V
Current - Average Rectified (Io)30A
Voltage - Forward (Vf) (Max) @ If2.65V @ 30A
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)26ns
Current - Reverse Leakage @ Vr30µA @ 600V
Capacitance @ Vr, F-
Mounting TypeSurface Mount
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageD2PAK
Operating Temperature - Junction-65°C ~ 175°C

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