VS-8TQ080STRL-M3
For Reference Only
| Part Number | VS-8TQ080STRL-M3 |
| PNEDA Part # | VS-8TQ080STRL-M3 |
| Description | DIODE SCHOTTKY 80V 8A TO263AB |
| Manufacturer | Vishay Semiconductor Diodes Division |
| Unit Price | Request a Quote |
| In Stock | 4,752 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 20 - Mar 25 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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VS-8TQ080STRL-M3 Resources
| Brand | Vishay Semiconductor Diodes Division |
| ECAD Module |
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| Mfr. Part Number | VS-8TQ080STRL-M3 |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
| Datasheet |
Payment Method
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- Some orders may require a minimum amount of $100.00.
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
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Notes
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VS-8TQ080STRL-M3 Specifications
| Manufacturer | Vishay Semiconductor Diodes Division |
| Series | - |
| Diode Type | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 80V |
| Current - Average Rectified (Io) | 8A |
| Voltage - Forward (Vf) (Max) @ If | 720mV @ 8A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | - |
| Current - Reverse Leakage @ Vr | 550µA @ 80V |
| Capacitance @ Vr, F | 500pF @ 5V, 1MHz |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package | TO-263 (D2Pak) |
| Operating Temperature - Junction | -55°C ~ 175°C |
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Manufacturer Vishay Semiconductor Diodes Division Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 200V Current - Average Rectified (Io) 700mA Voltage - Forward (Vf) (Max) @ If 1.1V @ 1A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) 1.8µs Current - Reverse Leakage @ Vr 10µA @ 200V Capacitance @ Vr, F 4pF @ 4V, 1MHz Mounting Type Surface Mount Package / Case DO-219AB Supplier Device Package DO-219AB (SMF) Operating Temperature - Junction -55°C ~ 150°C |
Manufacturer Infineon Technologies Series CoolSiC™+ Diode Type Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max) 300V Current - Average Rectified (Io) 10A (DC) Voltage - Forward (Vf) (Max) @ If 1.7V @ 10A Speed No Recovery Time > 500mA (Io) Reverse Recovery Time (trr) 0ns Current - Reverse Leakage @ Vr 200µA @ 300V Capacitance @ Vr, F 600pF @ 0V, 1MHz Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package PG-TO220-3 Operating Temperature - Junction -55°C ~ 175°C |
