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VS-8EWS10S-M3

VS-8EWS10S-M3

For Reference Only

Part Number VS-8EWS10S-M3
PNEDA Part # VS-8EWS10S-M3
Description DIODE GEN PURP 1KV 8A DPAK
Manufacturer Vishay Semiconductor Diodes Division
Unit Price Request a Quote
In Stock 3,258
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

VS-8EWS10S-M3 Resources

Brand Vishay Semiconductor Diodes Division
ECAD Module ECAD
Mfr. Part NumberVS-8EWS10S-M3
CategorySemiconductorsDiodes & RectifiersRectifiers - Single

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VS-8EWS10S-M3 Specifications

ManufacturerVishay Semiconductor Diodes Division
Series-
Diode TypeStandard
Voltage - DC Reverse (Vr) (Max)1000V
Current - Average Rectified (Io)8A
Voltage - Forward (Vf) (Max) @ If1.1V @ 8A
SpeedStandard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)-
Current - Reverse Leakage @ Vr50µA @ 1000V
Capacitance @ Vr, F-
Mounting TypeSurface Mount
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageD-PAK (TO-252AA)
Operating Temperature - Junction-55°C ~ 150°C

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