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VS-8EWH06FNTRR-M3

VS-8EWH06FNTRR-M3

For Reference Only

Part Number VS-8EWH06FNTRR-M3
PNEDA Part # VS-8EWH06FNTRR-M3
Description DIODE GEN PURP 600V 8A D-PAK
Manufacturer Vishay Semiconductor Diodes Division
Unit Price Request a Quote
In Stock 3,580
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 19 - Mar 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

VS-8EWH06FNTRR-M3 Resources

Brand Vishay Semiconductor Diodes Division
ECAD Module ECAD
Mfr. Part NumberVS-8EWH06FNTRR-M3
CategorySemiconductorsDiodes & RectifiersRectifiers - Single
Datasheet
VS-8EWH06FNTRR-M3, VS-8EWH06FNTRR-M3 Datasheet (Total Pages: 7, Size: 152.64 KB)
PDFVS-8EWH06FNTRR-M3 Datasheet Cover
VS-8EWH06FNTRR-M3 Datasheet Page 2 VS-8EWH06FNTRR-M3 Datasheet Page 3 VS-8EWH06FNTRR-M3 Datasheet Page 4 VS-8EWH06FNTRR-M3 Datasheet Page 5 VS-8EWH06FNTRR-M3 Datasheet Page 6 VS-8EWH06FNTRR-M3 Datasheet Page 7

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VS-8EWH06FNTRR-M3 Specifications

ManufacturerVishay Semiconductor Diodes Division
SeriesFRED Pt®
Diode TypeStandard
Voltage - DC Reverse (Vr) (Max)600V
Current - Average Rectified (Io)8A
Voltage - Forward (Vf) (Max) @ If2.4V @ 8A
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)25ns
Current - Reverse Leakage @ Vr50µA @ 600V
Capacitance @ Vr, F-
Mounting TypeSurface Mount
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageD-PAK (TO-252AA)
Operating Temperature - Junction-65°C ~ 175°C

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