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VS-4ESH01-M3/86A

VS-4ESH01-M3/86A

For Reference Only

Part Number VS-4ESH01-M3/86A
PNEDA Part # VS-4ESH01-M3-86A
Description DIODE GEN PURP 100V 4A TO277A
Manufacturer Vishay Semiconductor Diodes Division
Unit Price Request a Quote
In Stock 23,958
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 27 - Dec 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

VS-4ESH01-M3/86A Resources

Brand Vishay Semiconductor Diodes Division
ECAD Module ECAD
Mfr. Part NumberVS-4ESH01-M3/86A
CategorySemiconductorsDiodes & RectifiersRectifiers - Single
Datasheet
VS-4ESH01-M3/86A, VS-4ESH01-M3/86A Datasheet (Total Pages: 7, Size: 127.82 KB)
PDFVS-4ESH01-M3/87A Datasheet Cover
VS-4ESH01-M3/87A Datasheet Page 2 VS-4ESH01-M3/87A Datasheet Page 3 VS-4ESH01-M3/87A Datasheet Page 4 VS-4ESH01-M3/87A Datasheet Page 5 VS-4ESH01-M3/87A Datasheet Page 6 VS-4ESH01-M3/87A Datasheet Page 7

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VS-4ESH01-M3/86A Specifications

ManufacturerVishay Semiconductor Diodes Division
SeriesFRED Pt®
Diode TypeStandard
Voltage - DC Reverse (Vr) (Max)100V
Current - Average Rectified (Io)4A
Voltage - Forward (Vf) (Max) @ If930mV @ 4A
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)20ns
Current - Reverse Leakage @ Vr2µA @ 100V
Capacitance @ Vr, F-
Mounting TypeSurface Mount
Package / CaseTO-277, 3-PowerDFN
Supplier Device PackageTO-277A (SMPC)
Operating Temperature - Junction-65°C ~ 175°C

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