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VS-2EGH01-M3/5BT

VS-2EGH01-M3/5BT

For Reference Only

Part Number VS-2EGH01-M3/5BT
PNEDA Part # VS-2EGH01-M3-5BT
Description DIODE GEN PURP 100V 2A DO214AA
Manufacturer Vishay Semiconductor Diodes Division
Unit Price Request a Quote
In Stock 3,562
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 26 - Dec 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

VS-2EGH01-M3/5BT Resources

Brand Vishay Semiconductor Diodes Division
ECAD Module ECAD
Mfr. Part NumberVS-2EGH01-M3/5BT
CategorySemiconductorsDiodes & RectifiersRectifiers - Single
Datasheet
VS-2EGH01-M3/5BT, VS-2EGH01-M3/5BT Datasheet (Total Pages: 6, Size: 109.5 KB)
PDFVS-2EGH01-M3/5BT Datasheet Cover
VS-2EGH01-M3/5BT Datasheet Page 2 VS-2EGH01-M3/5BT Datasheet Page 3 VS-2EGH01-M3/5BT Datasheet Page 4 VS-2EGH01-M3/5BT Datasheet Page 5 VS-2EGH01-M3/5BT Datasheet Page 6

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VS-2EGH01-M3/5BT Specifications

ManufacturerVishay Semiconductor Diodes Division
SeriesFRED Pt®
Diode TypeStandard
Voltage - DC Reverse (Vr) (Max)100V
Current - Average Rectified (Io)2A
Voltage - Forward (Vf) (Max) @ If900mV @ 2A
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)23ns
Current - Reverse Leakage @ Vr2µA @ 100V
Capacitance @ Vr, F-
Mounting TypeSurface Mount
Package / CaseDO-214AA, SMB
Supplier Device PackageDO-214AA (SMBJ)
Operating Temperature - Junction-55°C ~ 175°C

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