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VS-2EFH01-M3/I

VS-2EFH01-M3/I

For Reference Only

Part Number VS-2EFH01-M3/I
PNEDA Part # VS-2EFH01-M3-I
Description DIODE GEN PURP 100V 2A DO219AB
Manufacturer Vishay Semiconductor Diodes Division
Unit Price Request a Quote
In Stock 8,046
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 3 - Apr 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

VS-2EFH01-M3/I Resources

Brand Vishay Semiconductor Diodes Division
ECAD Module ECAD
Mfr. Part NumberVS-2EFH01-M3/I
CategorySemiconductorsDiodes & RectifiersRectifiers - Single
Datasheet
VS-2EFH01-M3/I, VS-2EFH01-M3/I Datasheet (Total Pages: 6, Size: 131.34 KB)
PDFVS-2EFH01-M3/I Datasheet Cover
VS-2EFH01-M3/I Datasheet Page 2 VS-2EFH01-M3/I Datasheet Page 3 VS-2EFH01-M3/I Datasheet Page 4 VS-2EFH01-M3/I Datasheet Page 5 VS-2EFH01-M3/I Datasheet Page 6

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VS-2EFH01-M3/I Specifications

ManufacturerVishay Semiconductor Diodes Division
SeriesFRED Pt®
Diode TypeStandard
Voltage - DC Reverse (Vr) (Max)100V
Current - Average Rectified (Io)2A
Voltage - Forward (Vf) (Max) @ If950mV @ 2A
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)24ns
Current - Reverse Leakage @ Vr2µA @ 100V
Capacitance @ Vr, F-
Mounting TypeSurface Mount
Package / CaseDO-219AB
Supplier Device PackageDO-219AB (SMF)
Operating Temperature - Junction-65°C ~ 175°C

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