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VS-12EWH06FN-M3

VS-12EWH06FN-M3

For Reference Only

Part Number VS-12EWH06FN-M3
PNEDA Part # VS-12EWH06FN-M3
Description DIODE GEN PURP 600V 12A TO252
Manufacturer Vishay Semiconductor Diodes Division
Unit Price Request a Quote
In Stock 51,558
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Dec 1 - Dec 6 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

VS-12EWH06FN-M3 Resources

Brand Vishay Semiconductor Diodes Division
ECAD Module ECAD
Mfr. Part NumberVS-12EWH06FN-M3
CategorySemiconductorsDiodes & RectifiersRectifiers - Single
Datasheet
VS-12EWH06FN-M3, VS-12EWH06FN-M3 Datasheet (Total Pages: 7, Size: 156.59 KB)
PDFVS-12EWH06FNTRR-M3 Datasheet Cover
VS-12EWH06FNTRR-M3 Datasheet Page 2 VS-12EWH06FNTRR-M3 Datasheet Page 3 VS-12EWH06FNTRR-M3 Datasheet Page 4 VS-12EWH06FNTRR-M3 Datasheet Page 5 VS-12EWH06FNTRR-M3 Datasheet Page 6 VS-12EWH06FNTRR-M3 Datasheet Page 7

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VS-12EWH06FN-M3 Specifications

ManufacturerVishay Semiconductor Diodes Division
SeriesFRED Pt®
Diode TypeStandard
Voltage - DC Reverse (Vr) (Max)600V
Current - Average Rectified (Io)12A
Voltage - Forward (Vf) (Max) @ If2.5V @ 12A
SpeedStandard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)-
Current - Reverse Leakage @ Vr10µA @ 600V
Capacitance @ Vr, F-
Mounting TypeSurface Mount
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageTO-252, (D-Pak)
Operating Temperature - Junction-65°C ~ 175°C

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