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VQ1001P-2

VQ1001P-2

For Reference Only

Part Number VQ1001P-2
PNEDA Part # VQ1001P-2
Description MOSFET 4N-CH 30V 0.83A 14DIP
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 5,994
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

VQ1001P-2 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberVQ1001P-2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
VQ1001P-2, VQ1001P-2 Datasheet (Total Pages: 5, Size: 46.08 KB)
PDFVQ1001P-E3 Datasheet Cover
VQ1001P-E3 Datasheet Page 2 VQ1001P-E3 Datasheet Page 3 VQ1001P-E3 Datasheet Page 4 VQ1001P-E3 Datasheet Page 5

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VQ1001P-2 Specifications

ManufacturerVishay Siliconix
Series-
FET Type4 N-Channel
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C830mA
Rds On (Max) @ Id, Vgs1.75Ohm @ 200mA, 5V
Vgs(th) (Max) @ Id2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs-
Input Capacitance (Ciss) (Max) @ Vds110pF @ 15V
Power - Max2W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / Case-
Supplier Device Package14-DIP

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