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VI40100G-E3/4W

VI40100G-E3/4W

For Reference Only

Part Number VI40100G-E3/4W
PNEDA Part # VI40100G-E3-4W
Description DIODE ARRAY SCHOTTKY 100V TO262
Manufacturer Vishay Semiconductor Diodes Division
Unit Price Request a Quote
In Stock 6,624
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 3 - Apr 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

VI40100G-E3/4W Resources

Brand Vishay Semiconductor Diodes Division
ECAD Module ECAD
Mfr. Part NumberVI40100G-E3/4W
CategorySemiconductorsDiodes & RectifiersRectifiers - Arrays
Datasheet
VI40100G-E3/4W, VI40100G-E3/4W Datasheet (Total Pages: 6, Size: 213.38 KB)
PDFV40100GHM3/4W Datasheet Cover
V40100GHM3/4W Datasheet Page 2 V40100GHM3/4W Datasheet Page 3 V40100GHM3/4W Datasheet Page 4 V40100GHM3/4W Datasheet Page 5 V40100GHM3/4W Datasheet Page 6

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VI40100G-E3/4W Specifications

ManufacturerVishay Semiconductor Diodes Division
SeriesTMBS®
Diode Configuration1 Pair Common Cathode
Diode TypeSchottky
Voltage - DC Reverse (Vr) (Max)100V
Current - Average Rectified (Io) (per Diode)20A
Voltage - Forward (Vf) (Max) @ If810mV @ 20A
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)-
Current - Reverse Leakage @ Vr500µA @ 100V
Operating Temperature - Junction-40°C ~ 150°C
Mounting TypeThrough Hole
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device PackageTO-262AA

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Current - Average Rectified (Io) (per Diode)

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Current - Average Rectified (Io) (per Diode)

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Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

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Current - Reverse Leakage @ Vr

120mA @ 45V

Operating Temperature - Junction

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Mounting Type

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Package / Case

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Supplier Device Package

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