V8PAM12-M3/I
For Reference Only
| Part Number | V8PAM12-M3/I |
| PNEDA Part # | V8PAM12-M3-I |
| Description | DIODE SCHOTTKY 120V 8A DO221BC |
| Manufacturer | Vishay Semiconductor Diodes Division |
| Unit Price | Request a Quote |
| In Stock | 5,634 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 26 - Dec 1 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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V8PAM12-M3/I Resources
| Brand | Vishay Semiconductor Diodes Division |
| ECAD Module |
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| Mfr. Part Number | V8PAM12-M3/I |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
| Datasheet |
Payment Method
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- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
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- Orders cannot be canceled after shipping the packages.
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V8PAM12-M3/I Specifications
| Manufacturer | Vishay Semiconductor Diodes Division |
| Series | eSMP®, TMBS® |
| Diode Type | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 120V |
| Current - Average Rectified (Io) | 8A |
| Voltage - Forward (Vf) (Max) @ If | 880mV @ 8A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | - |
| Current - Reverse Leakage @ Vr | 500µA @ 120V |
| Capacitance @ Vr, F | 730pF @ 4V, 1MHz |
| Mounting Type | Surface Mount |
| Package / Case | DO-221BC, SMA Flat Leads Exposed Pad |
| Supplier Device Package | DO-221BC (SMPA) |
| Operating Temperature - Junction | -40°C ~ 175°C |
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Manufacturer Vishay Semiconductor Diodes Division Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 500V Current - Average Rectified (Io) 3A Voltage - Forward (Vf) (Max) @ If 1.2V @ 3A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 5µA @ 500V Capacitance @ Vr, F 30pF @ 4V, 1MHz Mounting Type Through Hole Package / Case DO-201AD, Axial Supplier Device Package DO-201AD Operating Temperature - Junction -50°C ~ 150°C |
Manufacturer Toshiba Semiconductor and Storage Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 20V Current - Average Rectified (Io) 300mA Voltage - Forward (Vf) (Max) @ If 450mV @ 300mA Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 50µA @ 20V Capacitance @ Vr, F 46pF @ 0V, 1MHz Mounting Type Surface Mount Package / Case SC-76, SOD-323 Supplier Device Package USC Operating Temperature - Junction 125°C (Max) |
