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V10P6HM3_A/I

V10P6HM3_A/I

For Reference Only

Part Number V10P6HM3_A/I
PNEDA Part # V10P6HM3_A-I
Description DIODE SCHOTTKY 60V 10A TO277A
Manufacturer Vishay Semiconductor Diodes Division
Unit Price Request a Quote
In Stock 7,722
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 25 - Nov 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

V10P6HM3_A/I Resources

Brand Vishay Semiconductor Diodes Division
ECAD Module ECAD
Mfr. Part NumberV10P6HM3_A/I
CategorySemiconductorsDiodes & RectifiersRectifiers - Single
Datasheet
V10P6HM3_A/I, V10P6HM3_A/I Datasheet (Total Pages: 5, Size: 98.85 KB)
PDFV10P6HM3_A/H Datasheet Cover
V10P6HM3_A/H Datasheet Page 2 V10P6HM3_A/H Datasheet Page 3 V10P6HM3_A/H Datasheet Page 4 V10P6HM3_A/H Datasheet Page 5

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V10P6HM3_A/I Specifications

ManufacturerVishay Semiconductor Diodes Division
SeriesAutomotive, AEC-Q101, eSMP®, TMBS®
Diode TypeSchottky
Voltage - DC Reverse (Vr) (Max)60V
Current - Average Rectified (Io)10A
Voltage - Forward (Vf) (Max) @ If590mV @ 10A
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)-
Current - Reverse Leakage @ Vr1.9mA @ 60V
Capacitance @ Vr, F-
Mounting TypeSurface Mount
Package / CaseTO-277, 3-PowerDFN
Supplier Device PackageTO-277A (SMPC)
Operating Temperature - Junction-40°C ~ 150°C

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Voltage - DC Reverse (Vr) (Max)

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Current - Average Rectified (Io)

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Voltage - Forward (Vf) (Max) @ If

500mV @ 3A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

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Current - Reverse Leakage @ Vr

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Capacitance @ Vr, F

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Current - Average Rectified (Io)

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Voltage - Forward (Vf) (Max) @ If

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Speed

Fast Recovery =< 500ns, > 200mA (Io)

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Current - Reverse Leakage @ Vr

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Operating Temperature - Junction

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