UT6K3TCR
For Reference Only
| Part Number | UT6K3TCR |
| PNEDA Part # | UT6K3TCR |
| Description | 30V NCH+NCH MIDDLE POWER MOSFET |
| Manufacturer | Rohm Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 107,226 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 23 - Nov 28 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
UT6K3TCR Resources
| Brand | Rohm Semiconductor |
| ECAD Module |
|
| Mfr. Part Number | UT6K3TCR |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Arrays |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- UT6K3TCR Datasheet
- where to find UT6K3TCR
- Rohm Semiconductor
- Rohm Semiconductor UT6K3TCR
- UT6K3TCR PDF Datasheet
- UT6K3TCR Stock
- UT6K3TCR Pinout
- Datasheet UT6K3TCR
- UT6K3TCR Supplier
- Rohm Semiconductor Distributor
- UT6K3TCR Price
- UT6K3TCR Distributor
UT6K3TCR Specifications
| Manufacturer | Rohm Semiconductor |
| Series | - |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 5.5A |
| Rds On (Max) @ Id, Vgs | 42mOhm @ 5A, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 4nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 450pF @ 15V |
| Power - Max | 2W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 6-PowerUDFN |
| Supplier Device Package | HUML2020L8 |
The Products You May Be Interested In
|
Manufacturer Series NexFET™ FET Type 2 N-Channel (Half Bridge) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 40A Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 19nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 3190pF @ 15V Power - Max 12W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-PowerLDFN Supplier Device Package 8-LSON (5x6) |
Manufacturer Infineon Technologies Series HEXFET® FET Type 2 P-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 12V Current - Continuous Drain (Id) @ 25°C 4.3A Rds On (Max) @ Id, Vgs 40mOhm @ 4.3A, 4.5V Vgs(th) (Max) @ Id 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 18nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 1400pF @ 10V Power - Max 1W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package 8-TSSOP |
Manufacturer Microsemi Corporation Series - FET Type 2 N-Channel (Half Bridge) FET Feature Standard Drain to Source Voltage (Vdss) 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C 14A Rds On (Max) @ Id, Vgs 960mOhm @ 12A, 10V Vgs(th) (Max) @ Id 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs 260nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 6696pF @ 25V Power - Max 357W Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Chassis Mount Package / Case SP1 Supplier Device Package SP1 |
Manufacturer Infineon Technologies Series HEXFET® FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 9.1A, 11A Rds On (Max) @ Id, Vgs 16.4mOhm @ 9.1A, 10V Vgs(th) (Max) @ Id 2.35V @ 25µA Gate Charge (Qg) (Max) @ Vgs 10nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 850pF @ 15V Power - Max 2W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SO |
Manufacturer Alpha & Omega Semiconductor Inc. Series - FET Type - FET Feature - Drain to Source Voltage (Vdss) - Current - Continuous Drain (Id) @ 25°C - Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds - Power - Max - Operating Temperature - Mounting Type - Package / Case - Supplier Device Package - |
