USB260HM3/52T
For Reference Only
| Part Number | USB260HM3/52T |
| PNEDA Part # | USB260HM3-52T |
| Description | DIODE GEN PURP 600V 2A DO214AA |
| Manufacturer | Vishay Semiconductor Diodes Division |
| Unit Price | Request a Quote |
| In Stock | 15,474 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 17 - Mar 22 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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USB260HM3/52T Resources
| Brand | Vishay Semiconductor Diodes Division |
| ECAD Module |
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| Mfr. Part Number | USB260HM3/52T |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
| Datasheet |
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USB260HM3/52T Specifications
| Manufacturer | Vishay Semiconductor Diodes Division |
| Series | Automotive, AEC-Q101 |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 600V |
| Current - Average Rectified (Io) | 2A |
| Voltage - Forward (Vf) (Max) @ If | 1.6V @ 2A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 30ns |
| Current - Reverse Leakage @ Vr | 5µA @ 600V |
| Capacitance @ Vr, F | 45pF @ 4V, 1MHz |
| Mounting Type | Surface Mount |
| Package / Case | DO-214AA, SMB |
| Supplier Device Package | DO-214AA (SMB) |
| Operating Temperature - Junction | -55°C ~ 150°C |
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Manufacturer ON Semiconductor Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 40V Current - Average Rectified (Io) 120mA (DC) Voltage - Forward (Vf) (Max) @ If 1V @ 40mA Speed Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 1µA @ 25V Capacitance @ Vr, F 5pF @ 1V, 1MHz Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package SOT-23 Operating Temperature - Junction -55°C ~ 150°C |
Manufacturer Taiwan Semiconductor Corporation Series Automotive, AEC-Q101 Diode Type Standard Voltage - DC Reverse (Vr) (Max) 300V Current - Average Rectified (Io) 1A Voltage - Forward (Vf) (Max) @ If 1.3V @ 1A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 35ns Current - Reverse Leakage @ Vr 5µA @ 300V Capacitance @ Vr, F 8pF @ 4V, 1MHz Mounting Type Surface Mount Package / Case DO-219AB Supplier Device Package Sub SMA Operating Temperature - Junction -55°C ~ 150°C |
Manufacturer Microsemi Corporation Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 30V Current - Average Rectified (Io) 500mA Voltage - Forward (Vf) (Max) @ If 650mV @ 500mA Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 10µA @ 30V Capacitance @ Vr, F 60pF @ 0V, 1MHz Mounting Type Through Hole Package / Case DO-204AH, DO-35, Axial Supplier Device Package DO-35 Operating Temperature - Junction -65°C ~ 125°C |
