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US1J-M3/5AT

US1J-M3/5AT

For Reference Only

Part Number US1J-M3/5AT
PNEDA Part # US1J-M3-5AT
Description DIODE GEN PURP 600V 1A DO214AC
Manufacturer Vishay Semiconductor Diodes Division
Unit Price Request a Quote
In Stock 7,542
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 2 - Apr 7 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

US1J-M3/5AT Resources

Brand Vishay Semiconductor Diodes Division
ECAD Module ECAD
Mfr. Part NumberUS1J-M3/5AT
CategorySemiconductorsDiodes & RectifiersRectifiers - Single
Datasheet
US1J-M3/5AT, US1J-M3/5AT Datasheet (Total Pages: 5, Size: 85.17 KB)
PDFUS1GHE3/61T Datasheet Cover
US1GHE3/61T Datasheet Page 2 US1GHE3/61T Datasheet Page 3 US1GHE3/61T Datasheet Page 4 US1GHE3/61T Datasheet Page 5

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US1J-M3/5AT Specifications

ManufacturerVishay Semiconductor Diodes Division
Series-
Diode TypeStandard
Voltage - DC Reverse (Vr) (Max)600V
Current - Average Rectified (Io)1A
Voltage - Forward (Vf) (Max) @ If1.7V @ 1A
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)-
Current - Reverse Leakage @ Vr10µA @ 600V
Capacitance @ Vr, F-
Mounting TypeSurface Mount
Package / CaseDO-214AC, SMA
Supplier Device PackageDO-214AC (SMA)
Operating Temperature - Junction-55°C ~ 150°C

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