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US1DHR3G

US1DHR3G

For Reference Only

Part Number US1DHR3G
PNEDA Part # US1DHR3G
Description DIODE GEN PURP 200V 1A DO214AC
Manufacturer Taiwan Semiconductor Corporation
Unit Price Request a Quote
In Stock 3,598
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

US1DHR3G Resources

Brand Taiwan Semiconductor Corporation
ECAD Module ECAD
Mfr. Part NumberUS1DHR3G
CategorySemiconductorsDiodes & RectifiersRectifiers - Single

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US1DHR3G Specifications

ManufacturerTaiwan Semiconductor Corporation
SeriesAutomotive, AEC-Q101
Diode TypeStandard
Voltage - DC Reverse (Vr) (Max)200V
Current - Average Rectified (Io)1A
Voltage - Forward (Vf) (Max) @ If1V @ 1A
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)50ns
Current - Reverse Leakage @ Vr5µA @ 200V
Capacitance @ Vr, F15pF @ 4V, 1MHz
Mounting TypeSurface Mount
Package / CaseDO-214AC, SMA
Supplier Device PackageDO-214AC (SMA)
Operating Temperature - Junction-55°C ~ 150°C

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