Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

UPA2825T1S-E2-AT

UPA2825T1S-E2-AT

For Reference Only

Part Number UPA2825T1S-E2-AT
PNEDA Part # UPA2825T1S-E2-AT
Description MOSFET N-CH 30V 8HVSON
Manufacturer Renesas Electronics America
Unit Price Request a Quote
In Stock 5,058
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 2 - Apr 7 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

UPA2825T1S-E2-AT Resources

Brand Renesas Electronics America
ECAD Module ECAD
Mfr. Part NumberUPA2825T1S-E2-AT
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
UPA2825T1S-E2-AT, UPA2825T1S-E2-AT Datasheet (Total Pages: 8, Size: 194 KB)
PDFUPA2825T1S-E2-AT Datasheet Cover
UPA2825T1S-E2-AT Datasheet Page 2 UPA2825T1S-E2-AT Datasheet Page 3 UPA2825T1S-E2-AT Datasheet Page 4 UPA2825T1S-E2-AT Datasheet Page 5 UPA2825T1S-E2-AT Datasheet Page 6 UPA2825T1S-E2-AT Datasheet Page 7 UPA2825T1S-E2-AT Datasheet Page 8

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • UPA2825T1S-E2-AT Datasheet
  • where to find UPA2825T1S-E2-AT
  • Renesas Electronics America

  • Renesas Electronics America UPA2825T1S-E2-AT
  • UPA2825T1S-E2-AT PDF Datasheet
  • UPA2825T1S-E2-AT Stock

  • UPA2825T1S-E2-AT Pinout
  • Datasheet UPA2825T1S-E2-AT
  • UPA2825T1S-E2-AT Supplier

  • Renesas Electronics America Distributor
  • UPA2825T1S-E2-AT Price
  • UPA2825T1S-E2-AT Distributor

UPA2825T1S-E2-AT Specifications

ManufacturerRenesas Electronics America
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C24A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs4.6mOhm @ 24A, 10V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs57nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2600pF @ 10V
FET Feature-
Power Dissipation (Max)1.5W (Ta), 16.5W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package-
Package / Case8-PowerWDFN

The Products You May Be Interested In

Manufacturer

IXYS

Series

HiPerFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

70V

Current - Continuous Drain (Id) @ 25°C

76A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

12mOhm @ 40A, 10V

Vgs(th) (Max) @ Id

3.4V @ 4mA

Gate Charge (Qg) (Max) @ Vgs

240nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4400pF @ 25V

FET Feature

-

Power Dissipation (Max)

360W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247AD (IXFH)

Package / Case

TO-247-3

SPP80N06S08NK

Infineon Technologies

Manufacturer

Infineon Technologies

Series

Automotive, AEC-Q101, SIPMOS®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

8mOhm @ 80A, 10V

Vgs(th) (Max) @ Id

4V @ 240µA

Gate Charge (Qg) (Max) @ Vgs

187nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3660pF @ 25V

FET Feature

-

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-3

Package / Case

TO-220-3

IRF7523D1TR

Infineon Technologies

Manufacturer

Infineon Technologies

Series

FETKY™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

2.7A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

130mOhm @ 1.7A, 10V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

12nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

210pF @ 25V

FET Feature

Schottky Diode (Isolated)

Power Dissipation (Max)

1.25W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

Micro8™

Package / Case

8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

STF260N4F7

STMicroelectronics

Manufacturer

STMicroelectronics

Series

STripFET™ F7

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

90A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2.5mOhm @ 60A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

67nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5640pF @ 25V

FET Feature

-

Power Dissipation (Max)

35W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220FP

Package / Case

TO-220-3 Full Pack

IXTP14N60P

IXYS

Manufacturer

IXYS

Series

PolarHV™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

14A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

550mOhm @ 7A, 10V

Vgs(th) (Max) @ Id

5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

36nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2500pF @ 25V

FET Feature

-

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

Recently Sold

LFE3-17EA-6MG328C

LFE3-17EA-6MG328C

Lattice Semiconductor Corporation

IC FPGA 116 I/O 328CSBGA

WSL2010R0100FEA18

WSL2010R0100FEA18

Vishay Dale

RES 0.01 OHM 1% 1W 2010

MPXV7002DP

MPXV7002DP

NXP

PRESSURE SENSOR DUAL PORT 8-SOP

NJM7808FA

NJM7808FA

NJR Corporation/NJRC

IC REG LINEAR 8V 1.5A TO220F

BAT54C-7-F

BAT54C-7-F

Diodes Incorporated

DIODE ARRAY SCHOTTKY 30V SOT23-3

M74VHC1G125DFT2G

M74VHC1G125DFT2G

ON Semiconductor

IC BUFFER NON-INVERT 5.5V SC88A

MAX1490BEPG+

MAX1490BEPG+

Maxim Integrated

IC TRANSCEIVER FULL 1/1 24DIP

UPD720114GA-YEU-AT

UPD720114GA-YEU-AT

Renesas Electronics America

IC CONTROLLER USB 48TQFP

MF-MSMF260-2

MF-MSMF260-2

Bourns

PTC RESET FUSE 6V 2.6A 1812

EN5329QI

EN5329QI

Intel

DC DC CONVERTER 0.6-4.9V 10W

DS2482X-101+T

DS2482X-101+T

Maxim Integrated

IC MASTER I2C-1WIRE 1CH 9-WLP

L7924CV

L7924CV

STMicroelectronics

IC REG LINEAR -24V 1.5A TO220AB