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UPA2765T1A-E2-AY

UPA2765T1A-E2-AY

For Reference Only

Part Number UPA2765T1A-E2-AY
PNEDA Part # UPA2765T1A-E2-AY
Description MOSFET N-CH 30V 100A 8SON
Manufacturer Renesas Electronics America
Unit Price Request a Quote
In Stock 3,294
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 26 - Dec 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

UPA2765T1A-E2-AY Resources

Brand Renesas Electronics America
ECAD Module ECAD
Mfr. Part NumberUPA2765T1A-E2-AY
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
UPA2765T1A-E2-AY, UPA2765T1A-E2-AY Datasheet (Total Pages: 7, Size: 144.06 KB)
PDFUPA2765T1A-E2-AY Datasheet Cover
UPA2765T1A-E2-AY Datasheet Page 2 UPA2765T1A-E2-AY Datasheet Page 3 UPA2765T1A-E2-AY Datasheet Page 4 UPA2765T1A-E2-AY Datasheet Page 5 UPA2765T1A-E2-AY Datasheet Page 6 UPA2765T1A-E2-AY Datasheet Page 7

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UPA2765T1A-E2-AY Specifications

ManufacturerRenesas Electronics America
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C100A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs2.9mOhm @ 32A, 4.5V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs152nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds6550pF @ 10V
FET Feature-
Power Dissipation (Max)1.5W (Ta), 83W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-HVSON (5.4x5.15)
Package / Case8-PowerVDFN

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