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UGB8JT-E3/81

UGB8JT-E3/81

For Reference Only

Part Number UGB8JT-E3/81
PNEDA Part # UGB8JT-E3-81
Description DIODE GEN PURP 600V 8A TO263AB
Manufacturer Vishay Semiconductor Diodes Division
Unit Price Request a Quote
In Stock 6,588
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Feb 18 - Feb 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

UGB8JT-E3/81 Resources

Brand Vishay Semiconductor Diodes Division
ECAD Module ECAD
Mfr. Part NumberUGB8JT-E3/81
CategorySemiconductorsDiodes & RectifiersRectifiers - Single
Datasheet
UGB8JT-E3/81, UGB8JT-E3/81 Datasheet (Total Pages: 5, Size: 144.69 KB)
PDFUG8JTHE3/45 Datasheet Cover
UG8JTHE3/45 Datasheet Page 2 UG8JTHE3/45 Datasheet Page 3 UG8JTHE3/45 Datasheet Page 4 UG8JTHE3/45 Datasheet Page 5

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UGB8JT-E3/81 Specifications

ManufacturerVishay Semiconductor Diodes Division
Series-
Diode TypeStandard
Voltage - DC Reverse (Vr) (Max)600V
Current - Average Rectified (Io)8A
Voltage - Forward (Vf) (Max) @ If1.75V @ 8A
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)50ns
Current - Reverse Leakage @ Vr30µA @ 600V
Capacitance @ Vr, F-
Mounting TypeSurface Mount
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageTO-263AB
Operating Temperature - Junction-55°C ~ 150°C

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