UFS580G/TR13
For Reference Only
| Part Number | UFS580G/TR13 |
| PNEDA Part # | UFS580G-TR13 |
| Description | DIODE GEN PURP 800V 5A DO215AB |
| Manufacturer | Microsemi |
| Unit Price | Request a Quote |
| In Stock | 4,878 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 17 - Mar 22 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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UFS580G/TR13 Resources
| Brand | Microsemi |
| ECAD Module |
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| Mfr. Part Number | UFS580G/TR13 |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
| Datasheet |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
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Notes
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UFS580G/TR13 Specifications
| Manufacturer | Microsemi Corporation |
| Series | - |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 800V |
| Current - Average Rectified (Io) | 5A |
| Voltage - Forward (Vf) (Max) @ If | 1.35V @ 5A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 60ns |
| Current - Reverse Leakage @ Vr | 10µA @ 800V |
| Capacitance @ Vr, F | - |
| Mounting Type | Surface Mount |
| Package / Case | DO-215AB, SMC Gull Wing |
| Supplier Device Package | DO-215AB |
| Operating Temperature - Junction | -55°C ~ 175°C |
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Manufacturer Central Semiconductor Corp Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 20V Current - Average Rectified (Io) 1A Voltage - Forward (Vf) (Max) @ If 500mV @ 1A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 500µA @ 20V Capacitance @ Vr, F 42pF @ 4V, 1MHz Mounting Type Surface Mount Package / Case DO-214AC, SMA Supplier Device Package SMA Operating Temperature - Junction -65°C ~ 150°C |
Manufacturer STMicroelectronics Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 100V Current - Average Rectified (Io) 20A Voltage - Forward (Vf) (Max) @ If 850mV @ 20A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 40µA @ 100V Capacitance @ Vr, F - Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package TO-220AB Operating Temperature - Junction 150°C (Max) |
Manufacturer Infineon Technologies Series CoolSiC™+ Diode Type Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max) 600V Current - Average Rectified (Io) 4A (DC) Voltage - Forward (Vf) (Max) @ If 1.9V @ 4A Speed No Recovery Time > 500mA (Io) Reverse Recovery Time (trr) 0ns Current - Reverse Leakage @ Vr 200µA @ 600V Capacitance @ Vr, F 150pF @ 0V, 1MHz Mounting Type Through Hole Package / Case TO-220-2 Supplier Device Package PG-TO220-2-2 Operating Temperature - Junction -55°C ~ 175°C |
