TSP10H200S S1G
For Reference Only
| Part Number | TSP10H200S S1G |
| PNEDA Part # | TSP10H200S-S1G |
| Description | DIODE SCHOTTKY 200V 10A TO277A |
| Manufacturer | Taiwan Semiconductor Corporation |
| Unit Price | Request a Quote |
| In Stock | 92,964 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 17 - Mar 22 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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TSP10H200S S1G Resources
| Brand | Taiwan Semiconductor Corporation |
| ECAD Module |
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| Mfr. Part Number | TSP10H200S S1G |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
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TSP10H200S S1G Specifications
| Manufacturer | Taiwan Semiconductor Corporation |
| Series | - |
| Diode Type | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 200V |
| Current - Average Rectified (Io) | 10A |
| Voltage - Forward (Vf) (Max) @ If | 910mV @ 10A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | - |
| Current - Reverse Leakage @ Vr | 100µA @ 200V |
| Capacitance @ Vr, F | - |
| Mounting Type | Surface Mount |
| Package / Case | TO-277, 3-PowerDFN |
| Supplier Device Package | TO-277A (SMPC) |
| Operating Temperature - Junction | -55°C ~ 150°C |
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Manufacturer WeEn Semiconductors Series - Diode Type Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max) 650V Current - Average Rectified (Io) 8A Voltage - Forward (Vf) (Max) @ If 1.7V @ 8A Speed No Recovery Time > 500mA (Io) Reverse Recovery Time (trr) 0ns Current - Reverse Leakage @ Vr 230µA @ 650V Capacitance @ Vr, F 260pF @ 1V, 1MHz Mounting Type Through Hole Package / Case TO-220-2 Full Pack, Isolated Tab Supplier Device Package TO-220F Operating Temperature - Junction 175°C (Max) |
Manufacturer Vishay Semiconductor Diodes Division Series Automotive, AEC-Q101, eSMP® Diode Type Standard Voltage - DC Reverse (Vr) (Max) 400V Current - Average Rectified (Io) 2.9A Voltage - Forward (Vf) (Max) @ If 1.05V @ 7A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) 2.6µs Current - Reverse Leakage @ Vr 20µA @ 400V Capacitance @ Vr, F 76pF @ 4V, 1MHz Mounting Type Surface Mount Package / Case TO-277, 3-PowerDFN Supplier Device Package TO-277A (SMPC) Operating Temperature - Junction -55°C ~ 175°C |
