TSM60N380CI C0G
For Reference Only
| Part Number | TSM60N380CI C0G |
| PNEDA Part # | TSM60N380CI-C0G |
| Description | MOSFET N-CH 600V 11A ITO220 |
| Manufacturer | Taiwan Semiconductor Corporation |
| Unit Price | Request a Quote |
| In Stock | 17,796 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Apr 3 - Apr 8 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
TSM60N380CI C0G Resources
| Brand | Taiwan Semiconductor Corporation |
| ECAD Module |
|
| Mfr. Part Number | TSM60N380CI C0G |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- TSM60N380CI C0G Datasheet
- where to find TSM60N380CI C0G
- Taiwan Semiconductor Corporation
- Taiwan Semiconductor Corporation TSM60N380CI C0G
- TSM60N380CI C0G PDF Datasheet
- TSM60N380CI C0G Stock
- TSM60N380CI C0G Pinout
- Datasheet TSM60N380CI C0G
- TSM60N380CI C0G Supplier
- Taiwan Semiconductor Corporation Distributor
- TSM60N380CI C0G Price
- TSM60N380CI C0G Distributor
TSM60N380CI C0G Specifications
| Manufacturer | Taiwan Semiconductor Corporation |
| Series | - |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 380mOhm @ 5.5A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 20.5nC @ 10V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 1040pF @ 100V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | ITO-220AB |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
The Products You May Be Interested In
|
Manufacturer Diodes Incorporated Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 3.8A (Ta) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 150mOhm @ 2.8A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 26.9nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1055pF @ 50V FET Feature - Power Dissipation (Max) 2.17W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-252-3 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Manufacturer Toshiba Semiconductor and Storage Series * FET Type - Technology - Drain to Source Voltage (Vdss) - Current - Continuous Drain (Id) @ 25°C - Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) - Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) - Operating Temperature - Mounting Type - Supplier Device Package - Package / Case - |
Manufacturer Nexperia USA Inc. Series Automotive, AEC-Q101, TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 100A (Tc) Drive Voltage (Max Rds On, Min Rds On) 5V Rds On (Max) @ Id, Vgs 4.1mOhm @ 25A, 10V Vgs(th) (Max) @ Id 2.1V @ 1mA Gate Charge (Qg) (Max) @ Vgs 50nC @ 5V Vgs (Max) ±10V Input Capacitance (Ciss) (Max) @ Vds 7853pF @ 25V FET Feature - Power Dissipation (Max) 238W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package LFPAK56, Power-SO8 Package / Case SC-100, SOT-669 |
Manufacturer Infineon Technologies Series * FET Type - Technology - Drain to Source Voltage (Vdss) - Current - Continuous Drain (Id) @ 25°C - Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) - Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) - Operating Temperature - Mounting Type - Supplier Device Package - Package / Case - |
Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 25V Current - Continuous Drain (Id) @ 25°C 40A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 1.35mOhm @ 50A, 10V Vgs(th) (Max) @ Id 2.1V @ 100µA Gate Charge (Qg) (Max) @ Vgs 55nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3520pF @ 13V FET Feature - Power Dissipation (Max) 3.6W (Ta), 96W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PQFN (5x6) Package / Case 8-PowerTDFN |
