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TSM4NB60CZ C0G

TSM4NB60CZ C0G

For Reference Only

Part Number TSM4NB60CZ C0G
PNEDA Part # TSM4NB60CZ-C0G
Description MOSFET N-CHANNEL 600V 4A TO220
Manufacturer Taiwan Semiconductor Corporation
Unit Price Request a Quote
In Stock 4,104
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 4 - Apr 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

TSM4NB60CZ C0G Resources

Brand Taiwan Semiconductor Corporation
ECAD Module ECAD
Mfr. Part NumberTSM4NB60CZ C0G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
TSM4NB60CZ C0G, TSM4NB60CZ C0G Datasheet (Total Pages: 12, Size: 1,324.59 KB)
PDFTSM4NB60CZ C0G Datasheet Cover
TSM4NB60CZ C0G Datasheet Page 2 TSM4NB60CZ C0G Datasheet Page 3 TSM4NB60CZ C0G Datasheet Page 4 TSM4NB60CZ C0G Datasheet Page 5 TSM4NB60CZ C0G Datasheet Page 6 TSM4NB60CZ C0G Datasheet Page 7 TSM4NB60CZ C0G Datasheet Page 8 TSM4NB60CZ C0G Datasheet Page 9 TSM4NB60CZ C0G Datasheet Page 10 TSM4NB60CZ C0G Datasheet Page 11

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TSM4NB60CZ C0G Specifications

ManufacturerTaiwan Semiconductor Corporation
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.5Ohm @ 2A, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs14.5nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds500pF @ 25V
FET Feature-
Power Dissipation (Max)50W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220
Package / CaseTO-220-3

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