TSM061NA03CV RGG
For Reference Only
| Part Number | TSM061NA03CV RGG |
| PNEDA Part # | TSM061NA03CV-RGG |
| Description | MOSFET N-CH 30V 66A 8PDFN |
| Manufacturer | Taiwan Semiconductor Corporation |
| Unit Price | Request a Quote |
| In Stock | 4,932 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Feb 18 - Feb 23 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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TSM061NA03CV RGG Resources
| Brand | Taiwan Semiconductor Corporation |
| ECAD Module |
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| Mfr. Part Number | TSM061NA03CV RGG |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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TSM061NA03CV RGG Specifications
| Manufacturer | Taiwan Semiconductor Corporation |
| Series | - |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 66A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 6.1mOhm @ 16A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 19.3nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1136pF @ 15V |
| FET Feature | - |
| Power Dissipation (Max) | 44.6W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-PDFN (3x3) |
| Package / Case | 8-PowerWDFN |
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