Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

TPH5R906NH,L1Q

TPH5R906NH,L1Q

For Reference Only

Part Number TPH5R906NH,L1Q
PNEDA Part # TPH5R906NH-L1Q
Description MOSFET N CH 60V 28A 8-SOP ADV
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 43,596
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 23 - Nov 28 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

TPH5R906NH Resources

Brand Toshiba Semiconductor and Storage
ECAD Module ECAD
Mfr. Part NumberTPH5R906NH,L1Q
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • TPH5R906NH,L1Q Datasheet
  • where to find TPH5R906NH,L1Q
  • Toshiba Semiconductor and Storage

  • Toshiba Semiconductor and Storage TPH5R906NH,L1Q
  • TPH5R906NH,L1Q PDF Datasheet
  • TPH5R906NH,L1Q Stock

  • TPH5R906NH,L1Q Pinout
  • Datasheet TPH5R906NH,L1Q
  • TPH5R906NH,L1Q Supplier

  • Toshiba Semiconductor and Storage Distributor
  • TPH5R906NH,L1Q Price
  • TPH5R906NH,L1Q Distributor

TPH5R906NH Specifications

ManufacturerToshiba Semiconductor and Storage
SeriesU-MOSVIII-H
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C28A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs5.9mOhm @ 14A, 10V
Vgs(th) (Max) @ Id4V @ 300µA
Gate Charge (Qg) (Max) @ Vgs38nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3100pF @ 30V
FET Feature-
Power Dissipation (Max)1.6W (Ta), 57W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SOP Advance (5x5)
Package / Case8-PowerVDFN

The Products You May Be Interested In

AUIRLR3705Z

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

42A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

8mOhm @ 42A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

66nC @ 5V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

2900pF @ 25V

FET Feature

-

Power Dissipation (Max)

130W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-Pak

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

STI400N4F6

STMicroelectronics

Manufacturer

STMicroelectronics

Series

DeepGATE™, STripFET™ VI

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

120A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.7mOhm @ 60A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

377nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

20000pF @ 25V

FET Feature

-

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I2PAK (TO-262)

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

STU3N62K3

STMicroelectronics

Manufacturer

STMicroelectronics

Series

SuperMESH3™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

620V

Current - Continuous Drain (Id) @ 25°C

2.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2.5Ohm @ 1.4A, 10V

Vgs(th) (Max) @ Id

4.5V @ 50µA

Gate Charge (Qg) (Max) @ Vgs

13nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

385pF @ 25V

FET Feature

-

Power Dissipation (Max)

45W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I-PAK

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

Manufacturer

NXP USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

16A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

180mOhm @ 8A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

63nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1850pF @ 25V

FET Feature

-

Power Dissipation (Max)

136W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

FDB8860

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

2.3mOhm @ 80A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

214nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

12585pF @ 15V

FET Feature

-

Power Dissipation (Max)

254W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-263AB

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Recently Sold

IXGA20N120A3

IXGA20N120A3

IXYS

IGBT 1200V 40A 180W TO263

DS5000-32-16+

DS5000-32-16+

Maxim Integrated

IC MCU 8BIT 32KB NVSRAM 40EDIP

17-21SURC/S530-A3/TR8

17-21SURC/S530-A3/TR8

Everlight Electronics Co Ltd

LED RED CLEAR SMD

D5V0L4B5SO-7

D5V0L4B5SO-7

Diodes Incorporated

TVS DIODE 5V 14V SOT353

MMBT4401LT1G

MMBT4401LT1G

ON Semiconductor

TRANS NPN 40V 0.6A SOT23

ABM3B-25.000MHZ-B2-T

ABM3B-25.000MHZ-B2-T

Abracon

CRYSTAL 25.0000MHZ 18PF SMD

GRM43ER71A226KE01L

GRM43ER71A226KE01L

Murata

CAP CER 22UF 10V X7R 1812

AT24RF08CN-10SC

AT24RF08CN-10SC

Microchip Technology

IC EEPROM 8K I2C 100KHZ 8SOIC

MCP73862T-I/SL

MCP73862T-I/SL

Microchip Technology

IC LI-ION CTRLR 8.2/8.4V 16SOIC

MT25QU01GBBB8ESF-0SIT

MT25QU01GBBB8ESF-0SIT

Micron Technology Inc.

IC FLASH 1G SPI 166MHZ 16SOP2

74HC04D

74HC04D

Toshiba Semiconductor and Storage

IC INVERTER 6CH 6-INP 14SOIC

UPD720114GA-YEU-AT

UPD720114GA-YEU-AT

Renesas Electronics America

IC CONTROLLER USB 48TQFP