Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

TPH1110FNH,L1Q

TPH1110FNH,L1Q

For Reference Only

Part Number TPH1110FNH,L1Q
PNEDA Part # TPH1110FNH-L1Q
Description MOSFET N-CH 250V 15A 8-SOP
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 7,092
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

TPH1110FNH Resources

Brand Toshiba Semiconductor and Storage
ECAD Module ECAD
Mfr. Part NumberTPH1110FNH,L1Q
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • TPH1110FNH,L1Q Datasheet
  • where to find TPH1110FNH,L1Q
  • Toshiba Semiconductor and Storage

  • Toshiba Semiconductor and Storage TPH1110FNH,L1Q
  • TPH1110FNH,L1Q PDF Datasheet
  • TPH1110FNH,L1Q Stock

  • TPH1110FNH,L1Q Pinout
  • Datasheet TPH1110FNH,L1Q
  • TPH1110FNH,L1Q Supplier

  • Toshiba Semiconductor and Storage Distributor
  • TPH1110FNH,L1Q Price
  • TPH1110FNH,L1Q Distributor

TPH1110FNH Specifications

ManufacturerToshiba Semiconductor and Storage
SeriesU-MOSVIII-H
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)250V
Current - Continuous Drain (Id) @ 25°C10A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs112mOhm @ 5A, 10V
Vgs(th) (Max) @ Id4V @ 300µA
Gate Charge (Qg) (Max) @ Vgs11nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1100pF @ 100V
FET Feature-
Power Dissipation (Max)1.6W (Ta), 57W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SOP Advance (5x5)
Package / Case8-PowerVDFN

The Products You May Be Interested In

IPD12CN10NGBUMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

67A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

12.4mOhm @ 67A, 10V

Vgs(th) (Max) @ Id

4V @ 83µA

Gate Charge (Qg) (Max) @ Vgs

65nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4320pF @ 50V

FET Feature

-

Power Dissipation (Max)

125W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO252-3

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

IPD046N08N5ATMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

80V

Current - Continuous Drain (Id) @ 25°C

90A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

4.6mOhm @ 45A, 10V

Vgs(th) (Max) @ Id

3.8V @ 65µA

Gate Charge (Qg) (Max) @ Vgs

53nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3800pF @ 40V

FET Feature

-

Power Dissipation (Max)

125W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO252-3

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

FDP5680

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

40A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

20mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

46nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1850pF @ 25V

FET Feature

-

Power Dissipation (Max)

65W (Tc)

Operating Temperature

-65°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case

TO-220-3

STW10NK60Z

STMicroelectronics

Manufacturer

STMicroelectronics

Series

SuperMESH™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

10A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

750mOhm @ 4.5A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

70nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1370pF @ 25V

FET Feature

-

Power Dissipation (Max)

156W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247-3

Package / Case

TO-247-3

NTP5404NRG

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

24A (Ta), 167A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

4.5mOhm @ 40A, 10V

Vgs(th) (Max) @ Id

3.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

125nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

7000pF @ 32V

FET Feature

-

Power Dissipation (Max)

5.4W (Ta), 254W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

Recently Sold

SMBJ33CA

SMBJ33CA

Semtech

1-LINE 33V 11.3A TVS DO-214AA

GQM1555C2D3R3CB01D

GQM1555C2D3R3CB01D

Murata

CAP CER 3.3PF 200V NP0 0402

S558-5999-M8-F

S558-5999-M8-F

Bel Fuse

MODULE XFRMR LAN GIGABIT 24P SMD

AD7768-4BSTZ

AD7768-4BSTZ

Analog Devices

IC ADC 24BIT SIGMA-DELTA 64LQFP

EC3SA-12D05N

EC3SA-12D05N

Cincon Electronics Co. LTD

ISOLATED DC/DC CONVERTERS 2.31-3

SMAJ33CA

SMAJ33CA

Bourns

TVS DIODE 33V 53.3V SMA

74F00SC

74F00SC

ON Semiconductor

IC GATE NAND 4CH 2-INP 14SOIC

KSZ9031RNXIC

KSZ9031RNXIC

Microchip Technology

IC TRANSCEIVER FULL 4/4 48QFN

MPU-6000

MPU-6000

TDK InvenSense

IMU ACCEL/GYRO I2C/SPI 24QFN

AD8505ARJZ-R7

AD8505ARJZ-R7

Analog Devices

IC OPAMP GP 1 CIRCUIT SOT23-5

MC14066BDG

MC14066BDG

ON Semiconductor

IC MULTIPLEXER QUAD 4X1 14SOIC

PS2801C-4-A

PS2801C-4-A

CEL

OPTOISO 2.5KV 4CH TRANS 16SSOP