Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

TK8A60W5,S5VX

TK8A60W5,S5VX

For Reference Only

Part Number TK8A60W5,S5VX
PNEDA Part # TK8A60W5-S5VX
Description MOSFET N-CH 600V 8A TO-220SIS
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 5,490
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 27 - Dec 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

TK8A60W5 Resources

Brand Toshiba Semiconductor and Storage
ECAD Module ECAD
Mfr. Part NumberTK8A60W5,S5VX
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • TK8A60W5,S5VX Datasheet
  • where to find TK8A60W5,S5VX
  • Toshiba Semiconductor and Storage

  • Toshiba Semiconductor and Storage TK8A60W5,S5VX
  • TK8A60W5,S5VX PDF Datasheet
  • TK8A60W5,S5VX Stock

  • TK8A60W5,S5VX Pinout
  • Datasheet TK8A60W5,S5VX
  • TK8A60W5,S5VX Supplier

  • Toshiba Semiconductor and Storage Distributor
  • TK8A60W5,S5VX Price
  • TK8A60W5,S5VX Distributor

TK8A60W5 Specifications

ManufacturerToshiba Semiconductor and Storage
SeriesDTMOSIV
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs540mOhm @ 4A, 10V
Vgs(th) (Max) @ Id4.5V @ 400µA
Gate Charge (Qg) (Max) @ Vgs22nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds590pF @ 300V
FET Feature-
Power Dissipation (Max)30W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220SIS
Package / CaseTO-220-3 Full Pack

The Products You May Be Interested In

IRF2807L

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

75V

Current - Continuous Drain (Id) @ 25°C

82A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

13mOhm @ 43A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

160nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3820pF @ 25V

FET Feature

-

Power Dissipation (Max)

230W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-262

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

Manufacturer

NXP USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

32A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

33mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

17.6nC @ 5V

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

1236pF @ 25V

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

Surface Mount

Supplier Device Package

DPAK

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Manufacturer

IXYS

Series

TrenchHV™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

150V

Current - Continuous Drain (Id) @ 25°C

130A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

12mOhm @ 65A, 10V

Vgs(th) (Max) @ Id

4.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

113nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

9800pF @ 25V

FET Feature

-

Power Dissipation (Max)

750W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247 (IXTH)

Package / Case

TO-247-3

NTNS3A67PZT5G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

Surface Mount

Supplier Device Package

SOT-883 (XDFN3) (1x0.6)

Package / Case

SC-101, SOT-883

STS11NF30L

STMicroelectronics

Manufacturer

STMicroelectronics

Series

STripFET™ II

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

11A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

10.5mOhm @ 5.5A, 10V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

30nC @ 5V

Vgs (Max)

±18V

Input Capacitance (Ciss) (Max) @ Vds

1440pF @ 25V

FET Feature

-

Power Dissipation (Max)

2.5W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)

Recently Sold

VLMS1300-GS08

VLMS1300-GS08

Vishay Semiconductor Opto Division

LED RED 0603 SMD

FHAC0001ZXJ

FHAC0001ZXJ

Littelfuse

FUSE HLDR BLADE 32V 20A IN LINE

7447709220

7447709220

Wurth Electronics

FIXED IND 22UH 5.3A 28 MOHM SMD

AD9745BCPZRL

AD9745BCPZRL

Analog Devices

IC DAC 12BIT A-OUT 72LFCSP

AD8250ARMZ-RL

AD8250ARMZ-RL

Analog Devices

IC INST AMP 1 CIRCUIT 10MSOP

STPS2H100U

STPS2H100U

STMicroelectronics

DIODE SCHOTTKY 100V 2A SMB

ST3485EBDR

ST3485EBDR

STMicroelectronics

IC TRANSCEIVER HALF 1/1 8SO

DG212BDY

DG212BDY

Vishay Siliconix

IC SWITCH QUAD SPST 16SOIC

S3A-13-F

S3A-13-F

Diodes Incorporated

DIODE GEN PURP 50V 3A SMC

XC7Z020-1CLG400C

XC7Z020-1CLG400C

Xilinx

IC SOC CORTEX-A9 667MHZ 400BGA

PIC32MX340F512H-80I/PT

PIC32MX340F512H-80I/PT

Microchip Technology

IC MCU 32BIT 512KB FLASH 64TQFP

LM2901DR2G

LM2901DR2G

ON Semiconductor

IC COMP QUAD SGL SUPPLY 14SOIC