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TJ8S06M3L(T6L1,NQ)

TJ8S06M3L(T6L1,NQ)

For Reference Only

Part Number TJ8S06M3L(T6L1,NQ)
PNEDA Part # TJ8S06M3L-T6L1-NQ
Description MOSFET P-CH 60V 8A DPAK-3
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 8,694
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 19 - Mar 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

TJ8S06M3L(T6L1 Resources

Brand Toshiba Semiconductor and Storage
ECAD Module ECAD
Mfr. Part NumberTJ8S06M3L(T6L1,NQ)
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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TJ8S06M3L(T6L1 Specifications

ManufacturerToshiba Semiconductor and Storage
SeriesU-MOSVI
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs104mOhm @ 4A, 10V
Vgs(th) (Max) @ Id3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs19nC @ 10V
Vgs (Max)+10V, -20V
Input Capacitance (Ciss) (Max) @ Vds890pF @ 10V
FET Feature-
Power Dissipation (Max)27W (Tc)
Operating Temperature175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDPAK+
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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