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TIS75_D26Z

TIS75_D26Z

For Reference Only

Part Number TIS75_D26Z
PNEDA Part # TIS75_D26Z
Description JFET N-CH 30V 0.35W TO92
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 4,806
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 31 - Apr 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

TIS75_D26Z Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberTIS75_D26Z
CategorySemiconductorsTransistorsTransistors - JFETs

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TIS75_D26Z Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
Voltage - Breakdown (V(BR)GSS)30V
Drain to Source Voltage (Vdss)-
Current - Drain (Idss) @ Vds (Vgs=0)8mA @ 15V
Current Drain (Id) - Max-
Voltage - Cutoff (VGS off) @ Id800mV @ 4nA
Input Capacitance (Ciss) (Max) @ Vds18pF @ 10V (VGS)
Resistance - RDS(On)60 Ohms
Power - Max350mW
Operating Temperature-
Mounting TypeThrough Hole
Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device PackageTO-92-3

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Series

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FET Type

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Voltage - Breakdown (V(BR)GSS)

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Drain to Source Voltage (Vdss)

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Current - Drain (Idss) @ Vds (Vgs=0)

1.5mA @ 15V

Current Drain (Id) - Max

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Voltage - Cutoff (VGS off) @ Id

800mV @ 10nA

Input Capacitance (Ciss) (Max) @ Vds

8pF @ 10V (VGS)

Resistance - RDS(On)

300 Ohms

Power - Max

300mW

Operating Temperature

150°C (TJ)

Mounting Type

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Package / Case

TO-236-3, SC-59, SOT-23-3

Supplier Device Package

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Series

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FET Type

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Voltage - Breakdown (V(BR)GSS)

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Drain to Source Voltage (Vdss)

40V

Current - Drain (Idss) @ Vds (Vgs=0)

15mA @ 20V

Current Drain (Id) - Max

-

Voltage - Cutoff (VGS off) @ Id

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Input Capacitance (Ciss) (Max) @ Vds

16pF @ 20V

Resistance - RDS(On)

50 Ohms

Power - Max

360mW

Operating Temperature

-65°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-206AA, TO-18-3 Metal Can

Supplier Device Package

TO-18 (TO-206AA)

J111

ON Semiconductor

Manufacturer

ON Semiconductor

Series

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FET Type

N-Channel

Voltage - Breakdown (V(BR)GSS)

35V

Drain to Source Voltage (Vdss)

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Current - Drain (Idss) @ Vds (Vgs=0)

20mA @ 15V

Current Drain (Id) - Max

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Voltage - Cutoff (VGS off) @ Id

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Input Capacitance (Ciss) (Max) @ Vds

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Resistance - RDS(On)

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Power - Max

625mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

TO-226-3, TO-92-3 (TO-226AA)

Supplier Device Package

TO-92-3

PN5434_D27Z

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Voltage - Breakdown (V(BR)GSS)

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Drain to Source Voltage (Vdss)

-

Current - Drain (Idss) @ Vds (Vgs=0)

30mA @ 15V

Current Drain (Id) - Max

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Voltage - Cutoff (VGS off) @ Id

1V @ 3nA

Input Capacitance (Ciss) (Max) @ Vds

30pF @ 10V (VGS)

Resistance - RDS(On)

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Power - Max

350mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

J112RL1

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Voltage - Breakdown (V(BR)GSS)

35V

Drain to Source Voltage (Vdss)

-

Current - Drain (Idss) @ Vds (Vgs=0)

5mA @ 15V

Current Drain (Id) - Max

-

Voltage - Cutoff (VGS off) @ Id

1V @ 1µA

Input Capacitance (Ciss) (Max) @ Vds

-

Resistance - RDS(On)

50 Ohms

Power - Max

350mW

Operating Temperature

-65°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

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