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TH58BYG2S3HBAI6

TH58BYG2S3HBAI6

For Reference Only

Part Number TH58BYG2S3HBAI6
PNEDA Part # TH58BYG2S3HBAI6
Description IC FLASH 4G PARALLEL 67VFBGA
Manufacturer Toshiba Memory America, Inc.
Unit Price Request a Quote
In Stock 7,980
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 3 - Apr 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

TH58BYG2S3HBAI6 Resources

Brand Toshiba Memory America, Inc.
ECAD Module ECAD
Mfr. Part NumberTH58BYG2S3HBAI6
CategorySemiconductorsMemory ICsMemory

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TH58BYG2S3HBAI6 Specifications

ManufacturerToshiba Memory America, Inc.
SeriesBenand™
Memory TypeNon-Volatile
Memory FormatFLASH
TechnologyFLASH - NAND (SLC)
Memory Size4Gb (512M x 8)
Memory InterfaceParallel
Clock Frequency-
Write Cycle Time - Word, Page25ns
Access Time25ns
Voltage - Supply1.7V ~ 1.95V
Operating Temperature-40°C ~ 85°C (TA)
Mounting TypeSurface Mount
Package / Case67-VFBGA
Supplier Device Package67-VFBGA (6.5x8)

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