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TF202THC-3-TL-HX

TF202THC-3-TL-HX

For Reference Only

Part Number TF202THC-3-TL-HX
PNEDA Part # TF202THC-3-TL-HX
Description JFET N-CH 1MA 100MW VTFP
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 2,844
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 3 - Apr 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

TF202THC-3-TL-HX Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberTF202THC-3-TL-HX
CategorySemiconductorsTransistorsTransistors - JFETs
Datasheet
TF202THC-3-TL-HX, TF202THC-3-TL-HX Datasheet (Total Pages: 5, Size: 312.46 KB)
PDFTF202THC-3-TL-HX Datasheet Cover
TF202THC-3-TL-HX Datasheet Page 2 TF202THC-3-TL-HX Datasheet Page 3 TF202THC-3-TL-HX Datasheet Page 4 TF202THC-3-TL-HX Datasheet Page 5

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TF202THC-3-TL-HX Specifications

ManufacturerON Semiconductor
Series*
FET Type-
Voltage - Breakdown (V(BR)GSS)-
Drain to Source Voltage (Vdss)-
Current - Drain (Idss) @ Vds (Vgs=0)-
Current Drain (Id) - Max-
Voltage - Cutoff (VGS off) @ Id-
Input Capacitance (Ciss) (Max) @ Vds-
Resistance - RDS(On)-
Power - Max-
Operating Temperature-
Mounting Type-
Package / Case-
Supplier Device Package-

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Current - Drain (Idss) @ Vds (Vgs=0)

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Current Drain (Id) - Max

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Voltage - Cutoff (VGS off) @ Id

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Input Capacitance (Ciss) (Max) @ Vds

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Resistance - RDS(On)

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Power - Max

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Operating Temperature

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Voltage - Breakdown (V(BR)GSS)

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Drain to Source Voltage (Vdss)

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Current - Drain (Idss) @ Vds (Vgs=0)

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Current Drain (Id) - Max

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Voltage - Cutoff (VGS off) @ Id

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Input Capacitance (Ciss) (Max) @ Vds

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Resistance - RDS(On)

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Power - Max

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Operating Temperature

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Mounting Type

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Package / Case

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Supplier Device Package

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Toshiba Semiconductor and Storage

Manufacturer

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Series

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FET Type

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Voltage - Breakdown (V(BR)GSS)

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Drain to Source Voltage (Vdss)

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Current - Drain (Idss) @ Vds (Vgs=0)

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Current Drain (Id) - Max

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Voltage - Cutoff (VGS off) @ Id

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Input Capacitance (Ciss) (Max) @ Vds

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Resistance - RDS(On)

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Power - Max

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Operating Temperature

125°C (TJ)

Mounting Type

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Package / Case

TO-236-3, SC-59, SOT-23-3

Supplier Device Package

SC-59

TF202THC-3-TL-H

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Voltage - Breakdown (V(BR)GSS)

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Drain to Source Voltage (Vdss)

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Current - Drain (Idss) @ Vds (Vgs=0)

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Current Drain (Id) - Max

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Voltage - Cutoff (VGS off) @ Id

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Input Capacitance (Ciss) (Max) @ Vds

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Resistance - RDS(On)

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Power - Max

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Package / Case

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Supplier Device Package

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Series

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FET Type

P-Channel

Voltage - Breakdown (V(BR)GSS)

30V

Drain to Source Voltage (Vdss)

30V

Current - Drain (Idss) @ Vds (Vgs=0)

1.5mA @ 15V

Current Drain (Id) - Max

-

Voltage - Cutoff (VGS off) @ Id

800mV @ 10nA

Input Capacitance (Ciss) (Max) @ Vds

8pF @ 10V (VGS)

Resistance - RDS(On)

300 Ohms

Power - Max

300mW

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Supplier Device Package

SOT-23 (TO-236AB)

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