TC58BYG2S0HBAI6
For Reference Only
| Part Number | TC58BYG2S0HBAI6 |
| PNEDA Part # | TC58BYG2S0HBAI6 |
| Description | IC FLASH 4G PARALLEL 67VFBGA |
| Manufacturer | Toshiba Memory America, Inc. |
| Unit Price | Request a Quote |
| In Stock | 6,048 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 27 - Dec 2 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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TC58BYG2S0HBAI6 Resources
| Brand | Toshiba Memory America, Inc. |
| ECAD Module |
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| Mfr. Part Number | TC58BYG2S0HBAI6 |
| Category | Semiconductors › Memory ICs › Memory |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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Notes
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TC58BYG2S0HBAI6 Specifications
| Manufacturer | Toshiba Memory America, Inc. |
| Series | Benand™ |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NAND (SLC) |
| Memory Size | 4Gb (512M x 8) |
| Memory Interface | Parallel |
| Clock Frequency | - |
| Write Cycle Time - Word, Page | 25ns |
| Access Time | 25ns |
| Voltage - Supply | 1.7V ~ 1.95V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 67-VFBGA |
| Supplier Device Package | 67-VFBGA (6.5x8) |
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Manufacturer Micron Technology Inc. Series - Memory Type Volatile Memory Format DRAM Technology SDRAM - Mobile LPDDR4 Memory Size 48Gb (768M x 64) Memory Interface - Clock Frequency 1866MHz Write Cycle Time - Word, Page - Access Time - Voltage - Supply 1.1V Operating Temperature -30°C ~ 85°C (TC) Mounting Type Surface Mount Package / Case 366-VFBGA Supplier Device Package 366-VFBGA (12x12.7) |
