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SUP85N10-10-GE3

SUP85N10-10-GE3

For Reference Only

Part Number SUP85N10-10-GE3
PNEDA Part # SUP85N10-10-GE3
Description MOSFET N-CH 100V 85A TO220AB
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 16,524
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SUP85N10-10-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSUP85N10-10-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SUP85N10-10-GE3, SUP85N10-10-GE3 Datasheet (Total Pages: 6, Size: 71.61 KB)
PDFSUP85N10-10-GE3 Datasheet Cover
SUP85N10-10-GE3 Datasheet Page 2 SUP85N10-10-GE3 Datasheet Page 3 SUP85N10-10-GE3 Datasheet Page 4 SUP85N10-10-GE3 Datasheet Page 5 SUP85N10-10-GE3 Datasheet Page 6

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SUP85N10-10-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C85A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs10.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs160nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds6550pF @ 25V
FET Feature-
Power Dissipation (Max)3.75W (Ta), 250W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device Package-
Package / CaseTO-220-3

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